High speed switching diode JSCJ BAV99 with 70 volt reverse voltage and 200 milliamp forward current
Key Attributes
Model Number:
BAV99
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
2.5uA@70V
Reverse Recovery Time (trr):
6ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
70V
Diode Configuration:
1 Pair Series Connection
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAV99
Package:
SOT-23
Product Description
Product Overview
The BAW56, BAV70, and BAV99 are high-performance switching diodes designed for general-purpose applications. They offer fast switching speeds and high conductance, making them suitable for various electronic circuits requiring efficient signal switching.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-23 Plastic-Encapsulate Diodes
- Molding Compound: Green (Solid dot = Green molding compound device)
Technical Specifications
| Part Number | Reverse Voltage (VR) | Forward Current (IF) | Forward Voltage (VF) @ IF | Reverse Current (IR) @ VR | Capacitance (CT) @ VR, f | Reverse Recovery Time (trr) | Power Dissipation (PD) | Thermal Resistance (RJA) | Junction and Storage Temperature Range (TJ,TSTG) |
|---|---|---|---|---|---|---|---|---|---|
| BAV56/BAV70/BAV99 | 70 V | 200 mA | VF1: 0.715 V @ 1mA VF2: 0.855 V @ 10mA VF3: 1 V @ 50mA VF4: 1.25 V @ 150mA | 2.5 A @ 70V | 1.5 pF @ 0V, 1MHz | 6 ns (IF=IR=10mA, Irr=0.1xIR, RL=100) | 225 mW | 556 /W | -55~+150 |
| BAV70 | 70 V | 200 mA | 225 mW | 556 /W | -55~+150 | ||||
| BAV99 | 70 V | 200 mA | 225 mW | 556 /W | -55~+150 |
2410121919_JSCJ-BAV99_C68983.pdf
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