Zener Diode Surface Mount 500mW Power Dissipation Jingdao Microelectronics BZT52C16W Wide Voltage Range
Key Attributes
Model Number:
BZT52C16W
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
40Ω
Diode Configuration:
Independent
Pd - Power Dissipation:
500mW
Zener Voltage(Range):
15.9V~17.1V
Zener Voltage(Nom):
16V
Impedance(Zzk):
200Ω
Mfr. Part #:
BZT52C16W
Package:
SOD-123W
Product Description
Product Overview
Surface Mount Zener Diodes with a total power dissipation of up to 500mW. These diodes offer a wide zener reverse voltage range from 2.0V to 75V and are housed in a small plastic package (SOD-123W) suitable for surface-mounted designs. They are ideal for various electronic applications requiring precise voltage regulation.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
Technical Specifications
| Type | Zener Voltage Range (V) Nom | Zener Voltage Range (V) Min | Zener Voltage Range (V) Max | IZT (mA) | ZZT@IZT () | IR @VR (A) | VF at IF = 10 mA (V) | Power Dissipation (mW) | RJA (C/W) |
| BZT52C2V0W | 2.0 | 2.09 | 1.91 | 1 | 600 | 150 | 0.9 | 500 | 305 |
| BZT52C2V4W | 2.4 | 2.6 | 2.2 | 1 | 600 | 50 | 0.9 | 500 | 305 |
| BZT52C2V7W | 2.7 | 2.9 | 2.5 | 1 | 600 | 20 | 0.9 | 500 | 305 |
| BZT52C3V0W | 3.0 | 3.2 | 2.8 | 1 | 600 | 10 | 0.9 | 500 | 305 |
| BZT52C3V3W | 3.3 | 3.5 | 3.1 | 1 | 600 | 5.0 | 0.9 | 500 | 305 |
| BZT52C3V6W | 3.6 | 3.8 | 3.4 | 1 | 600 | 5.0 | 0.9 | 500 | 305 |
| BZT52C3V9W | 3.9 | 4.1 | 3.7 | 1 | 600 | 3.0 | 0.9 | 500 | 305 |
| BZT52C4V3W | 4.3 | 4.6 | 4 | 1 | 600 | 3.0 | 0.9 | 500 | 305 |
| BZT52C4V7W | 4.7 | 5 | 4.4 | 1 | 500 | 3.0 | 0.9 | 500 | 305 |
| BZT52C5V1W | 5.1 | 5.4 | 4.8 | 1 | 480 | 2.0 | 0.9 | 500 | 305 |
| BZT52C5V6W | 5.6 | 6 | 5.2 | 1 | 400 | 1.0 | 0.9 | 500 | 305 |
| BZT52C6V2W | 6.2 | 6.6 | 5.8 | 1 | 150 | 3.0 | 0.9 | 500 | 305 |
| BZT52C6V8W | 6.8 | 7.2 | 6.4 | 1 | 80 | 2.0 | 0.9 | 500 | 305 |
| BZT52C7V5W | 7.5 | 7.9 | 7 | 1 | 80 | 1.0 | 0.9 | 500 | 305 |
| BZT52C8V2W | 8.2 | 8.7 | 7.7 | 1 | 80 | 0.7 | 0.9 | 500 | 305 |
| BZT52C9V1W | 9.1 | 9.6 | 8.5 | 1 | 100 | 0.5 | 0.9 | 500 | 305 |
| BZT52C10W | 10 | 10.6 | 9.4 | 1 | 150 | 0.2 | 0.9 | 500 | 305 |
| BZT52C11W | 11 | 11.6 | 10.4 | 1 | 150 | 0.1 | 0.9 | 500 | 305 |
| BZT52C12W | 12 | 12.7 | 11.4 | 1 | 150 | 0.1 | 0.9 | 500 | 305 |
| BZT52C13W | 13 | 14.1 | 12.4 | 1 | 170 | 0.1 | 0.9 | 500 | 305 |
| BZT52C15W | 15 | 15.6 | 13.8 | 1 | 200 | 0.1 | 0.9 | 500 | 305 |
| BZT52C16W | 16 | 17.1 | 15.3 | 1 | 200 | 0.1 | 0.9 | 500 | 305 |
| BZT52C18W | 18 | 19.1 | 16.8 | 1 | 225 | 0.1 | 0.9 | 500 | 305 |
| BZT52C20W | 20 | 21.2 | 18.8 | 1 | 225 | 0.1 | 0.9 | 500 | 305 |
| BZT52C22W | 22 | 23.3 | 20.8 | 1 | 250 | 0.1 | 0.9 | 500 | 305 |
| BZT52C24W | 24 | 25.6 | 22.8 | 1 | 250 | 0.1 | 0.9 | 500 | 305 |
| BZT52C27W | 27 | 28.9 | 25.1 | 0.5 | 300 | 0.1 | 0.9 | 500 | 305 |
| BZT52C30W | 30 | 32 | 28 | 0.5 | 300 | 0.1 | 0.9 | 500 | 305 |
| BZT52C33W | 33 | 35 | 31 | 0.5 | 325 | 0.1 | 0.9 | 500 | 305 |
| BZT52C36W | 36 | 38 | 34 | 0.5 | 350 | 0.1 | 0.9 | 500 | 305 |
| BZT52C39W | 39 | 41 | 37 | 0.5 | 350 | 0.1 | 0.9 | 500 | 305 |
| BZT52C43W | 43 | 46 | 40 | 1 | 500 | 2 | 0.9 | 500 | 305 |
| BZT52C47W | 47 | 50 | 44 | 1 | 500 | 2 | 0.9 | 500 | 305 |
| BZT52C51W | 51 | 54 | 48 | 1 | 500 | 1 | 0.9 | 500 | 305 |
| BZT52C56W | 56 | 60 | 52 | 1 | 500 | 1 | 0.9 | 500 | 305 |
| BZT52C62W | 62 | 66 | 58 | 1 | 500 | 1 | 0.9 | 500 | 305 |
| BZT52C68W | 68 | 72 | 64 | 1 | 500 | 1 | 0.9 | 500 | 305 |
| BZT52C75W | 75 | 79 | 70 | 1 | 500 | 1 | 0.9 | 500 | 305 |
2409300902_Jingdao-Microelectronics-BZT52C16W_C3019315.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
