High Reliability MOSFET JingYang TDNM1230UX Suitable for Synchronous Buck Converter Applications
Key Attributes
Model Number:
TDNM1230UX
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
RDS(on):
12mΩ@10V,8A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
109pF
Input Capacitance(Ciss):
940pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
9.6nC
Mfr. Part #:
TDNM1230UX
Package:
SOP-8
Product Description
Product Overview
The TDNM1230UX is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: JY Electronics (inferred from domain)
- Origin: China (inferred from domain)
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDSS | VGS=0V, ID=250uA | 30 | -- | -- | V |
| (Absolute Maximum Rating) | -- | -- | 30 | V | ||
| Gate Source Voltage | VGSS | (Absolute Maximum Rating) | -- | -- | ±20 | V |
| Drain Current (Continuous) | ID | TA=25�b0;C | -- | -- | 10 | A |
| TA=100�b0;C | -- | -- | 8 | A | ||
| Drain Current (Pulse) | IDM | *B | -- | -- | 36 | A |
| Power Dissipation | PD | TA=25�b0;C | -- | -- | 1.5 | W |
| TA=100�b0;C | -- | -- | 1.0 | W | ||
| Operating/Storage Temperature | TJ/TSTG | -55 | -- | 150 | �b0;C | |
| Single Pulse Avalanche Energy | EAS | -- | -- | 24.2 | mJ | |
| Thermal Resistance, Junction-to-Ambient | RθJA | A | -- | 85 | -- | �b0;C/W |
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | -- | -- | 1 | uA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, IDS=250uA | 1.2 | -- | 2.5 | V |
| Gate Leakage Current | IGSS | VGS=±20V, VDS=0V | -- | -- | ±100 | nA |
| Drain-Source On-state Resistance | RDS(on) | VGS=10V, ID=8A | -- | -- | 12 | m℆ |
| VGS=4.5V, ID=6A | -- | -- | 18 | m℆ | ||
| Diode Forward Voltage | VSD | ISD=1A, VGS=0V | -- | -- | 1 | V |
| Total Gate Charge | Qg | VGS=4.5V, VDS=15V, ID=8A | -- | 9.6 | -- | nC |
| Gate-Source Charge | Qgs | -- | 3.9 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 3.4 | -- | nC | |
| Turn-on Delay Time | td(on) | VGS=10V, VDD=15V, ID=8A, RGEN=1.5℆ | -- | 4.2 | -- | ns |
| Turn-on Rise Time | tr | -- | 8.2 | -- | ns | |
| Turn-off Delay Time | td(off) | -- | 31 | -- | ns | |
| Turn-off Fall Time | tf | -- | 4 | -- | ns | |
| Input Capacitance | Ciss | VGS=0V, VDS=15V, f=1MHZ | -- | 940 | -- | pF |
| Output Capacitance | Coss | -- | 131 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 109 | -- | pF |
2405091034_JingYang-TDNM1230UX_C5364049.pdf
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