Energy synchronous buck converter mosfet JingYang TNM2030N3X with full function reliability approval
Key Attributes
Model Number:
TNM2030N3X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
28A
RDS(on):
18mΩ@10V,28A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-channel
Output Capacitance(Coss):
81pF
Pd - Power Dissipation:
20W
Input Capacitance(Ciss):
572pF
Gate Charge(Qg):
7.2nC@10V
Mfr. Part #:
TNM2030N3X
Package:
DFN-8L(3x3)
Product Description
Product Overview
The TNM2030N3X is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Certifications: RoHS, Green Product
- Origin: www.jy-electronics.com.cn
- Contact: service@jy-electronics.com.cn
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Conditions |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | |
| Gate Source Voltage | VGSS | ±20 | V | |
| Drain Current (Continuous) @ TA=25°C | ID | 28 | A | |
| Drain Current (Continuous) @ TA=100°C | ID | 18 | A | |
| Drain Current (Pulse) | IDM | 55 | A | *B |
| Power Dissipation @ TA=25°C | PD | 20 | W | |
| Operating/Storage Temperature | TJ/TSTG | -55~150 | °C | |
| Single Pulse Avalanche Energy | EAS | 22.1 | mJ | |
| Avalanche Current | IAS | 21 | A | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 75 | °C/W | A |
| Thermal resistance, junction-case max | RθJC | 6 | °C/W | |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0VID=250uA |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=24VVGS=0V |
| Gate Threshold Voltage | VGS(TH) | 1.0 - 2.5 | V | VDS=VGSIDS=250uA |
| Gate Leakage Current | IGSS | ±100 | nA | VGS=±20VVDS=0V |
| Drain-Source On-state Resistance | RDS(on) | 18 | mΩ | VGS=10VID=10A |
| Drain-Source On-state Resistance | RDS(on) | 30 | mΩ | VGS=4.5VID=5A |
| Forward Transconductance | gfs | 4.5 | S | ISD=1AVDS=5V |
| Total Gate Charge | Qg | 7.2 | nC | VGS=4.5VVDS=20VID=10A |
| Gate-Source Charge | Qgs | 1.4 | nC | |
| Gate-Drain Charge | Qgd | 2.2 | nC | |
| Turn-on Delay Time | td(on) | 4.1 | ns | VGS=10VVDD=12VID=5A RGEN=3.3Ω |
| Turn-on Rise Time | tr | 9.8 | ns | |
| Turn-off Delay Time | td(off) | 15.5 | ns | |
| Turn-off Fall Time | tf | 6.0 | ns | |
| Input Capacitance | Ciss | 572 | pF | VGS=0VVDS=15Vf=1MHZ |
| Output Capacitance | Coss | 81 | pF | |
| Reverse Transfer Capacitance | Crss | 65 | pF | |
| Continuous Diode Forward Current | IS | 28 | A | VG=VD=0V , Force Current |
| Diode Forward Voltage | VSD | 1.2 | V | ISD=1AVGS=0V |
2405091033_JingYang-TNM2030N3X_C5307990.pdf
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