High Surge Current Schottky Diode JSCJ BAS40WS with 40 Volt Reverse Voltage and Fast Switching Speed
Key Attributes
Model Number:
BAS40WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
200nA@30V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
200mA
Mfr. Part #:
BAS40WS
Package:
SOD-323
Product Description
Product Overview
The BAS40WS is a Schottky Barrier Diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features low turn-on voltage, fast switching, and PN junction guard for transient and ESD protection. The plastic material has a UL Recognition Flammability Classification 94V-O.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: BAS40WS
- Package Type: SOD-323
- Material: Plastic
- UL Recognition Flammability Classification: 94V-O
- Marking: 43
- Cathode Indicator: Marking bar
- Molding Compound: Solid dot = Green (if present)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
| Peak Repetitive Peak Reverse Voltage | VRRM | 40 | V | |
| Working Peak Reverse Voltage | VRWM | 40 | V | |
| DC Blocking Voltage | VR | 40 | V | |
| Forward Continuous Current | IF | 200 | mA | |
| Non-repetitive Peak Forward Surge Current | IFSM | 600 | mA | @t=8.3ms |
| Power Dissipation | Pd | 200 | mW | @Ta=25 |
| Thermal Resistance Junction to Ambient | RJA | 500 | /W | |
| Storage Temperature | TSTG | -55 ~ +150 | ||
| Reverse breakdown voltage | V(BR) | 40 | V | IR=10A |
| Forward voltage | VF1 | 0.38 | V | IF=1mA |
| Forward voltage | VF2 | 0.5 | V | IF=10mA |
| Forward voltage | VF3 | 1 | V | IF=40mA |
| Reverse current | IR | 20 | nA | VR=30V |
| Reverse current | IR | 200 | nA | VR=30V |
| Capacitance between terminals | CT | 4 | pF | VR=0V,f=1MHz |
| Capacitance between terminals | CT | 5 | pF | VR=0V,f=1MHz |
| Reverse recovery time | trr | 5 | ns | IF=IR=10mA, Irr=0.1XIR,RL=100 |
| Junction temperature | TJ | 125 |
2410121228_JSCJ-BAS40WS_C77296.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
