High speed switching diode JSCJ DAP202U with green molding compound and compact SOT323 package
Key Attributes
Model Number:
DAP202U
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
DAP202U
Package:
SOT-323
Product Description
Product Overview
The DAP202U is a high-speed switching diode designed for high packing density layouts. It offers high reliability and is available in four types of packaging, including the SOT-323 package.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: P
- Packaging: SOT-323
- Material: Plastic-Encapsulate Diodes
- Color: Green molding compound device (if solid dot is present)
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| Non-Repetitive Peak Reverse Voltage | VRM | 80 | V | |
| DC Blocking Voltage | VR | 80 | V | |
| Forward Continuous Current | IFM | 300 | mA | |
| Average Rectified Output Current | IO | 100 | mA | |
| Power Dissipation | PD | @Ta=25 | 200 | mW |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55~+150 | ||
| Thermal resistance From Junction to ambient | RJA | 625 | /W | |
| Forward Surge Current @t=8.3ms Non-Repetitive Peak | IFSM | 2.0 | A | |
| Reverse breakdown voltage | V(BR) | IR= 100A | 80 | V |
| Reverse voltage leakage current | IR | VR=70V | 0.1 | A |
| Forward voltage | VF | IF=100mA | 1.2 | V |
| Diode capacitance | CD | VR=6V, f=1MHz | 3.5 | pF |
| Reverse recovery time | trr | VR=6V, IF=5mA | 4 | ns |
2410121931_JSCJ-DAP202U_C3034819.pdf
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