SOD123 Schottky Barrier Diode JSCJ SD103AW designed for fast switching and low leakage applications
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SD103AW-SD103CW SCHOTTKY BARRIER DIODE
The SD103AW, SD103BW, and SD103CW are Schottky Barrier Diodes in a SOD-123 plastic package. They feature low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and low capacitance. These diodes are suitable for general purpose applications where fast switching and low leakage are required.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOD-123
- Diode Type: Schottky Barrier Diode
- Marking: SD103AW:S4, SD103BW:S5, SD103CW:S6
Technical Specifications
| Symbol | Parameter | SD103AW | SD103BW | SD103CW | Unit |
| VRRM | Peak Repetitive Reverse Voltage | 40 | 30 | 20 | V |
| VRWM | Working Peak Reverse Voltage | 40 | 30 | 20 | V |
| VR(RMS) | RMS Reverse Voltage | 28 | 21 | 14 | V |
| IFM | Forward Continuous Current | 350 | mA | ||
| IFSM | Non-repetitive Peak Forward Surge Current @ t= 8.3ms | 2 | A | ||
| PD | Power Dissipation | 400 | mW | ||
| RJA | Thermal Resistance from Junction to Ambient | 250 | /W | ||
| Tj | Junction Temperature | 125 | |||
| Tstg | Storage Temperature | -55~+150 | |||
| V(BR) | Reverse voltage (IR=100A) | 40 | 30 | 20 | V |
| IR | Reverse current (VR=30V for SD103AW, VR=20V for SD103BW, VR=10V for SD103CW) | 5 | A | ||
| VF | Forward voltage (IF=20mA) | 0.37 | V | ||
| VF | Forward voltage (IF=200mA) | 0.6 | V | ||
| Ctot | Total capacitance (VR=0V,f=1MHz) | 50 | pF | ||
| trr | Reverse recovery time (IF= IR=200mA, Irr=0.1IR, RL=100) | 10 | ns | ||
2410121248_JSCJ-SD103AW_C8606.pdf
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