Low forward voltage switching diode JSCJ 1SS226 with small capacitance and fast reverse recovery time in SOT23
Key Attributes
Model Number:
1SS226
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
500nA@80V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
80V
Diode Configuration:
1 Pair Series Connection
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
1SS226
Package:
SOT-23
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 1SS226 is a switching diode in a SOT-23 plastic-encapsulated package. It features low forward voltage, fast reverse recovery time, and small total capacitance, making it suitable for various switching applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Marking: C3
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Max | Unit |
| Reverse breakdown voltage | V(BR) | IR= 100uA | 80 | V | |
| Reverse voltage leakage current | IR | VR=80V | 0.5 | uA | |
| Forward voltage | VF | IF=100mA | 1.2 | V | |
| Diode capacitance | CD | VR=0V , f=1MHz | 3 | pF | |
| Reverse recovery time | trr | IF=10mA | 4 | ns | |
| Non-Repetitive Peak Reverse Voltage | VRM | @Ta=25 | 85 | V | |
| Peak Repetitive Peak Reverse Voltage | VRRM | @Ta=25 | 80 | V | |
| Working Peak Reverse Voltage | VRWM | @Ta=25 | 80 | V | |
| DC Blocking Voltage | VR | @Ta=25 | 80 | V | |
| Forward Continuous Current | IFM | @Ta=25 | 300 | mA | |
| Average Rectified Output Current | IO | @Ta=25 | 100 | mA | |
| Peak Forward Surge Current | IFSM | @t=10ms, @Ta=25 | 2 | A | |
| Power Dissipation | PD | @Ta=25 | 150 | mW | |
| Junction Temperature | TJ | 150 | |||
| Storage Temperature | TSTG | -55~+150 |
2410121656_JSCJ-1SS226_C8554.pdf
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