Plastic Encapsulated Rectifier Diode JSCJ RS3M with Fast Recovery and High Surge Current Capability

Key Attributes
Model Number: RS3M
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Leakage Current (Ir):
10uA@1kV
Reverse Recovery Time (trr):
500ns
Voltage - DC Reverse (Vr) (Max):
1kV
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.3V@3A
Current - Rectified:
3A
Mfr. Part #:
RS3M
Package:
SMBG
Product Description

Product Overview

The RS3A THRU RS3M series are SMBG plastic-encapsulated fast recovery rectifier diodes designed for high surge current capability. These diodes are suitable for rectifier applications and offer a voltage range from 50V to 1000V.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Material: Plastic-Encapsulated Diodes
  • Color: Color band denotes cathode

Technical Specifications

ItemSymbolUnitTest ConditionsRS3ARS3BRS3DRS3GRS3JRS3KRS3M
Maximum RMS VoltageVRMSV501002004006008001000
Repetitive Peak Reverse VoltageVRRMV501002004006008001000
Average Forward CurrentIF(AV)A60Hz Half-sine wave, Resistance load, TL=753.0
Surge(Non-repetitive)Forward CurrentIFSMA60Hz Half-sine wave, 1 cycle, Ta=253570140280420560700
Operation Junction and Storage Temperature RangeTJ,TSTG -55 ~ +150
Peak Forward VoltageVFVIF =3.0A, TJ=251.3
Peak Reverse CurrentIRRM1AVRM=VRRM, Ta =2550
Peak Reverse CurrentIRRM2AVRM=VRRM, Ta =100150
Maximum reverse recovery timetrrnsIF=0.5A,IR=1.0A,Irr =0.25A250
Thermal Resistance(Typical)RJ-A/ WBetween junction and ambient150
Thermal Resistance(Typical)RJ-L/ WBetween junction and terminal50

2410121844_JSCJ-RS3M_C2923956.pdf

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