Low capacitance PIN diode JSCJ BAP70Q designed for signal switching and modulation applications
Key Attributes
Model Number:
BAP70Q
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA
Voltage - DC Reverse (Vr) (Max):
50V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@50mA
Current - Rectified:
100mA
Mfr. Part #:
BAP70Q
Package:
TSOT-23-5L
Product Description
Product Overview
The BAP70Q is a general-purpose PIN diode designed for various applications. It features low diode capacitance and low diode forward resistance, making it suitable for signal switching and modulation circuits.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: BAP70Q
- Package Type: TSOT-23-5L
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Continuous Reverse Voltage | VR | 50 | V | |||
| Continuous Forward Current | IF | 100 | mA | |||
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | @Ta=25 | ||
| Junction Temperature | Tj | -55 | 150 | |||
| Storage Temperature | TSTG | -55 | 150 | |||
| Forward Voltage | VF | 1.1 | V | IF=50mA | ||
| Reverse Current | IR | 100 | nA | VR=50V | ||
| Diode Capacitance | Cd1 | pF | VR=0V,f=1MHz | |||
| Diode Capacitance | Cd2 | 0.55 | pF | VR=1V,f=1MHz | ||
| Diode Capacitance | Cd3 | 0.35 | pF | VR=5V,f=1MHz | ||
| Diode Forward Resistance | rD | 40 | IF=0.5mA, f=100MHz;note1 | |||
| Diode Forward Resistance | rD | 25 | IF=1mA, f=100MHz;note1 | |||
| Diode Forward Resistance | rD | IF=10mA, f=100MHz;note1 | ||||
| Power Dissipation | PD | 125 | mW | (Ta=90) |
2410121918_JSCJ-BAP70Q_C5441274.pdf
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