High Reliability Schottky Barrier Diode JSCJ DS751-40EAA02 for High Speed Switching Applications
Key Attributes
Model Number:
DS751-40EAA02
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200mA
Reverse Leakage Current (Ir):
500nA@30V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
370mV@1mA
Current - Rectified:
30mA
Mfr. Part #:
DS751-40EAA02
Package:
0201
Product Description
Product Overview
DFNWB0.6x0.3-2L is a small surface mounting type Schottky Barrier Diode offering low reverse current and low forward voltage with high reliability. It is designed for high-speed switching applications in detection and is suitable for portable equipment such as mobile phones, MP3 players, MD players, CD-ROMs, DVD-ROMs, and notebook PCs.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Name: DFNWB0.6x0.3-2L
- Marking: DS751-40EAA02
- Package: Plastic-Encapsulate Diodes
- Origin: Jiangsu Changjing Electronics Technology Co., Ltd
Technical Specifications
| Parameter | Symbol | Test Condition | Limit | Unit |
| Repetitive Peak Reverse Voltage | VRRM | 40 | V | |
| Working Peak Reverse Voltage | VRWM | 40 | V | |
| RMS Reverse Voltage | VR(RMS) | 28 | V | |
| Average Rectified Output Current | IO | 30 | mA | |
| Non-Repetitive Peak Forward Surge Current | IFSM | @ t=8.3ms | 200 | mA |
| Power Dissipation | Pd | 100 | mW | |
| Thermal Resistance from Junction to Ambient | RJA | 1000 | /W | |
| Operating Junction Temperature Range | TJ | -40 ~ +125 | ||
| Storage Temperature Range | Tstg | -55 ~ +150 | ||
| Reverse breakdown voltage | V(BR) | IR=1mA | 40 | V |
| Reverse current | IR | VR=30V | 0.5 | A |
| Forward voltage | VF | IF= 1mA | 0.37 | V |
| Capacitance between terminals | CT | VR=1V,f=1MHz | 2 | pF |
2410121931_JSCJ-DS751-40EAA02_C2910043.pdf
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