Low Forward Voltage Drop Schottky Barrier Diode JSCJ B1040WS Suitable for DC DC Conversion Circuits
Key Attributes
Model Number:
B1040WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
5A
Reverse Leakage Current (Ir):
50uA@20V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
550mV@700mA
Current - Rectified:
1A
Mfr. Part #:
B1040WS
Package:
SOD-323
Product Description
Product Overview
This Schottky Barrier Diode is designed for low voltage rectification and high efficiency DC/DC conversion. Its very small SMD package makes it suitable for applications such as switch mode power supplies, inverse polarity protection, and other low power consumption scenarios. Key advantages include a low forward voltage drop.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: The marking bar indicates the cathode. Solid dot = Green molding compound device, if none, the normal device.
- Package: SOD-323 Plastic-Encapsulate Diodes
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 40 | V | |||
| Working Peak Reverse Voltage | VRWM | 40 | V | |||
| RMS Reverse Voltage | VR(RMS) | 28 | V | |||
| Power Dissipation | PD | Ta=25 | 250 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | 400 | /W | |||
| Operation Junction Temperature Range | Tj | -40 | +125 | |||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Reverse breakdown voltage | V(BR) | IR=1mA | 40 | V | ||
| Reverse current | IR | VR=20V | 0.51 | uA | ||
| Forward voltage | VF | IF=0.51A | 0.55 | V | ||
| Total capacitance | Ctot | VR=10V,f=1MHz | 20 | pF | ||
| Average Rectified Output Current | IO | 1 | A | |||
| Non-repetitive Peak Forward Surge Current | IFSM | @ t=8.3ms | 5 | A |
2410121747_JSCJ-B1040WS_C77281.pdf
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