JSCJ ES2A SMAG Super Fast Recovery Rectifier Diode with Plastic Encapsulation and Color Band Cathode
Key Attributes
Model Number:
ES2A(SMAG)
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Reverse Leakage Current (Ir):
5uA
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
50V
Voltage - Forward(Vf@If):
950mV@2.0A
Current - Rectified:
2A
Mfr. Part #:
ES2A(SMAG)
Package:
SMAG
Product Description
Product Overview
The ES2A through ES2J series are Super Fast Recovery Rectifier Diodes designed for high surge current capability. These diodes are suitable for rectifier applications and offer a wide range of repetitive peak reverse voltage from 50V to 600V. They feature a color band denoting cathode polarity and are available in a plastic-encapsulated SMAG package.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate
- Color: Color band denotes cathode
Technical Specifications
| Item | Symbol | Unit | Test Conditions | ES2A | ES2B | ES2C | ES2D | ES2E | ES2G | ES2H | ES2J |
| Maximum RMS Voltage | VRM | V | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | |
| Repetitive Peak Reverse Voltage | VRRM | V | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | |
| Average Forward Current | IF(AV) | A | 60Hz Half-sine wave Resistance loadTa=110 | 2.0 | |||||||
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz Half-sine wave 1 cycleTa=25 | 75 | |||||||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 ~ +150 | |||||||||
| Peak Forward Voltage | VF | V | IF =2.0A | 0.5 | 0.95 | 0.95 | 0.95 | 1.7 | 1.7 | 1.7 | 1.7 |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta =25 | 1.0 | |||||||
| Peak Reverse Current | IRRM2 | A | VRM=VRRM, Ta =100 | 100 | |||||||
| Maximum reverse recovery time | trr | ns | IF=0.5A,IR=1.0A,Irr =0.25A | 35 | 35 | 35 | 35 | 75 | 75 | 75 | 75 |
| Thermal Resistance(Typical) | RJ-A | / W | Between junction and ambient | 5.0 | |||||||
| Thermal Resistance(Typical) | RJ-L | / W | Between junction and terminal | 1.25 | |||||||
2410121810_JSCJ-ES2A-SMAG_C5356799.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
