diode JSCJ MMBD1503 with 200 volt DC blocking voltage and 200 milliamp continuous forward current rating

Key Attributes
Model Number: MMBD1503
Product Custom Attributes
Reverse Leakage Current (Ir):
10nA
Non-Repetitive Peak Forward Surge Current:
2A
Voltage - DC Reverse (Vr) (Max):
200V
Operating Junction Temperature Range:
-55℃~+150℃
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.3V@200mA
Current - Rectified:
200mA
Mfr. Part #:
MMBD1503
Package:
SOT-23
Product Description

Product Overview

The MMBD1503A is a low leakage diode with high conductance, designed for various electronic applications. It offers reliable performance with a DC blocking voltage of 200V and continuous forward current of 200mA.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
  • Model: MMBD1503A
  • Marking: A13
  • Material: Plastic-Encapsulate Diodes
  • Color: Green molding compound device (indicated by solid dot)
  • Origin: China (implied by company name and website)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
DC Blocking Voltage VR 200 V
Continuous Forward Current IO 200 mA
Peak Forward Current IFM 700 mA
Non-repetitive Peak Forward Surge Current IFSM @t=8.3ms A
Power Dissipation PD 350 mW
Thermal Resistance from Junction to Ambient RJA 357 /W
Operation Junction and Storage Temperature Range TJ,Tstg -55 +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Reverse voltage V(BR) IR=5A 200 V
Reverse current IR VR=180V 10 nA
Forward voltage VF IF=1mA 0.75 V
IF=10mA 0.85 V
IF=50mA 0.95 V
IF=100mA 1.1 V
IF=200mA 1.3 V
Forward voltage VF IF=300mA 1.5 V
Total capacitance Ctot VR=0V,f=1MHz 4 pF

2504101957_JSCJ-MMBD1503_C3034840.pdf

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