Rectifier Diode JSCJ 1N5819 Schottky Type with 1 Amp Average Forward Current and 40 Volt Peak Reverse Voltage DO41
Key Attributes
Model Number:
1N5819
Product Custom Attributes
Reverse Leakage Current (Ir):
1mA@40V
Non-Repetitive Peak Forward Surge Current:
30A
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
600mV@1.0A
Current - Rectified:
1A
Mfr. Part #:
1N5819
Package:
DO-41
Product Description
Product Overview
The 1N5817 THRU 1N5819 series are Schottky rectifier diodes in a DO-41 plastic-encapsulated package. They offer high surge current capability and are suitable for rectifier applications. The color band denotes the cathode polarity.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Product Line: 1N581X
- Packaging: DO-41 Plastic-Encapsulate Diodes, Ammo Box Packaging
Technical Specifications
| Item | Symbol | Unit | 1N5817 | 1N5818 | 1N5819 | Conditions |
|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | V | 20 | 30 | 40 | T=25 Unless otherwise specified |
| Average Forward Current | IF(AV) | A | 1.0 | T=25 Unless otherwise specified | ||
| Surge(Non-repetitive)Forward Current | IFSM | A | 30 | 60Hz Half-sine wave , 1 cycle , Ta =25 | ||
| Junction Temperature | TJ | -55~+125 | ||||
| Storage Temperature | TSTG | -55 ~ +150 | ||||
| Peak Forward Voltage | VFM | V | 0.45 | 0.55 | 0.6 | IFM=1.0A, Ta=25 |
| Peak Reverse Current | IRRM | mA | 0.1 | 1.0 | 1.0 | VRM=VRRM, Ta=125 |
| Thermal Resistance(Typical) | RJ-A | /W | 50 | Between junction and ambient, mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas | ||
| Thermal Resistance(Typical) | RJ-L | /W | 15 | Between junction and lead, mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas | ||
| Maximum RMS Voltage | VRMS | V | 14 | 28 | 21 | |
2410121743_JSCJ-1N5819_C5295404.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
