High Current Rectifier JSCJ SBDD20150CT with 150 Volt Peak Reverse Voltage and Low Forward Voltage Drop
Key Attributes
Model Number:
SBDD20150CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
2uA@150V
Voltage - DC Reverse (Vr) (Max):
150V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
830mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBDD20150CT
Package:
TO-252-2
Product Description
Product Overview
The SBDD20150CT is a Schottky Barrier Rectifier designed for low power loss and high efficiency applications. It offers high current capability and a low forward voltage drop, making it suitable for various power supply and rectification tasks. The device features guard ring construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: SBDD20150CT
- Packaging: TO-252-2L Plastic-Encapsulate Diodes
- Marking: SBD, D20150CT, XXXX (Code)
- Molding Compound: Solid dot = Green molding compound device; if none, the normal device.
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Peak repetitive reverse voltage | VRRM | 150 | V | |
| Working peak reverse voltage | VRWM | V | ||
| DC blocking voltage | VR | 150 | V | |
| RMS reverse voltage | VR(RMS) | 105 | V | |
| Average rectified output current | IO | Ta=25 | 20 | A |
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 150 | A | |
| Thermal resistance from junction to ambient | RJA | /W | ||
| Junction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55~+150 | ||
| Reverse voltage | V(BR) | VR=150V | 150 | V |
| Reverse current | IR | VR=150V, Pulse test | X$ *Pulse test: pulse width 300s, duty cycle 2.0%. | mA |
| Forward voltage | VF | IF=5A, Tj =25 | 0.76 | V |
| Forward voltage | VF | IF=5A, Tj =125 | 0.64 | V |
| Forward voltage | VF | IF=10A, Tj =25 | 0.83 | V |
| Forward voltage | VF | IF=10A, Tj =125 | 0.71 | V |
| Forward voltage | VF(typ) | @Tj=125 | 0.71 | V |
| Thermal resistance from junction to case | RJC | 2.0 | /W | |
| Total Capacitance | CTOT | f = 1 MHz, Tj = 25 | 100 | pF |
2410121814_JSCJ-SBDD20150CT_C513357.pdf
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