Low Forward Voltage Drop Rectifier JSCJ SBDB30100CT Suitable for Applications Requiring Rectification

Key Attributes
Model Number: SBDB30100CT
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@100V
Non-Repetitive Peak Forward Surge Current:
200A
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
850mV@15A
Current - Rectified:
30A
Mfr. Part #:
SBDB30100CT
Package:
TO-263-2L
Product Description

Product Overview

This Schottky Barrier Rectifier offers low power loss and high efficiency with high current capability and low forward voltage drop. It features a Guard Ring Die Construction for transient protection. Ideal for applications requiring efficient rectification.

Product Attributes

  • Brand: JSCJ
  • Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Material: Plastic-Encapsulate Diode
  • Color: Green molding compound device (if solid dot present), otherwise normal device.
  • Device Code: SBDB30100CT

Technical Specifications

ParameterSymbolTest conditionsValueUnit
Peak repetitive reverse voltageVRRM100V
Working peak reverse voltageVRWMV
DC blocking voltageVR100V
RMS reverse voltageVR(RMS)70V
Average rectified output currentIO30A
Non-Repetitive peak forward surge current (8.3ms half sine wave)IFSM200A
Junction temperatureTj150
Storage temperatureTstg-55~+150
Reverse voltageV(BR)IR=0.1mA100V
Reverse currentIRVR=100V, Tj=255.0mA
Reverse currentIRVR=100V, Tj=1251.0mA
Forward voltageVFIF=30A, Tj=250.82V
Forward voltageVFIF=30A, Tj=1250.77V
Forward voltageVFIF=15A, Tj=250.70V
Forward voltageVFIF=15A, Tj=1250.64V
Forward voltage (typ)VF(typ)@Tj=1250.70V
Thermal resistance from junction to ambientRJA62.5/W
Thermal resistance from junction to caseRJCTc=252.0/W
Total CapacitanceCTOTf = 1 MHz, Ta = 25150pF

2410121815_JSCJ-SBDB30100CT_C5295519.pdf

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