Low forward voltage Schottky Barrier Diode JSCJ RB495D designed for surface mount electronic circuits
Key Attributes
Model Number:
RB495D
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
70uA@25V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
500mV@200mA
Current - Rectified:
400mA
Mfr. Part #:
RB495D
Package:
SOT-23
Product Description
Product Overview
The RB495D is a Schottky Barrier Diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, housed in a SOT-23 plastic-encapsulated package. It offers a small surface mounting type with low forward voltage and low reverse current, ensuring high reliability for general rectification applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: RB495D
- Package Type: SOT-23
- Diode Type: Schottky Barrier Diode
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Peak Repetitive Reverse Voltage | VRRM | 40 | V | |||
| Working Peak Reverse Voltage | VRWM | 40 | V | |||
| RMS Reverse Voltage | VR(RMS) | 28 | V | |||
| Continuous Forward Current | IO | Ta=25 | 400 | mA | ||
| Non-repetitive Peak Forward Surge Current | IFSM | @t=8.3ms | 2 | A | ||
| Power Dissipation | PD | Ta=25 | 250 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | 400 | /W | |||
| Junction Temperature | TJ | 125 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Reverse Voltage (Breakdown) | V(BR) | IR=100A | 25 | V | ||
| Reverse Current | IR | VR=25V, Ta=25 | 70 | A | ||
| Forward Voltage | VF | IF=10mA, Ta=25 | 0.3 | V | ||
| Forward Voltage | VF | IF=200mA, Ta=25 | 0.5 | V | ||
| Capacitance Between Terminals | CT | VR=0V, f=1MHz, Ta=25 | 10 | pF |
2410121245_JSCJ-RB495D_C77345.pdf
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