High Conductance Switching Diode JSCJ BAS21W SOT323 Package Ideal for Automatic Insertion Applications
Key Attributes
Model Number:
BAS21W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21W
Package:
SOT-323-3
Product Description
Product Overview
The BAS19W/20W/21W are surface-mount plastic-encapsulated switching diodes from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. Designed for general-purpose switching applications, these diodes feature fast switching speeds and a package ideally suited for automatic insertion. They offer high conductance and are available in a SOT-323 package.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package Type: SOT-323
- Marking: BAS19W:KA8, BAS20W:KT2, BAS21W:KT3
- Molding Compound: Solid dot = Green molding compound device, if none, the normal device.
- Website: www.cj-elec.com
Technical Specifications
| Parameter | Symbol | BAS19W | BAS20W | BAS21W | Unit | Test Conditions | |
| Peak Repetitive Reverse Voltage / DC Blocking Voltage | VRRM / VR | 100 | 150 | 250 | V | ||
| Average Rectified Output Current | IO | 200 | mA | ||||
| Power Dissipation | PD | 200 | mW | @Ta=25 | |||
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | ||||
| Junction Temperature | TJ | 150 | |||||
| Storage Temperature Range | TSTG | -55~+150 | |||||
| Reverse breakdown voltage | V(BR) | 100 | 150 | 250 | V | IR= 100A | |
| Reverse voltage leakage current | IR | A | |||||
| BAS19W | BAS20W | BAS21W | |||||
| 0.1 | A | VR=100V | |||||
| 0.1 | A | VR=150V | |||||
| 0.1 | A | VR=200V | |||||
| Forward voltage | VF | 1 | V | IF=100mA | |||
| 1.25 | V | IF=200mA | |||||
| Diode capacitance | CD | 5 | pF | VR=0V, f=1MHz | |||
| Reveres recovery time | trr | 50 | ns | IF=IR=30mA,Irr=0.1IR | |||
| Forward Surge Current Non-Repetitive Peak | IFSM | 2.5 | A | @t=8.3ms | |||
2409272232_JSCJ-BAS21W_C44849.pdf
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