Low forward voltage Schottky barrier diode JSCJ SD103CW in SOD123 package for electronic applications
Key Attributes
Model Number:
SD103CW
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1.5A
Reverse Leakage Current (Ir):
5uA@10V
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
20V
Voltage - Forward(Vf@If):
600mV@200mA
Current - Rectified:
350mA
Mfr. Part #:
SD103CW
Package:
SOD-123
Product Description
Product Overview
The SD103AW-SD103CW series are Schottky barrier diodes from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, housed in a SOD-123 package. These diodes feature a low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and low reverse capacitance, making them suitable for various electronic applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOD-123
- Diode Type: Schottky Barrier Diode
Technical Specifications
| Model | Peak Repetitive Peak Reverse Voltage (VRRM) | RMS Reverse Voltage (VR(RMS)) | Forward Continuous Current (IFM) | Power Dissipation (Pd) | Reverse breakdown voltage (V(BR)R) Min | Forward voltage (VF) Typ | Reverse current (IRM) Max | Capacitance between terminals (CT) Typ | Reverse recovery time (trr) Typ | Storage Temperature (TSTG) | Junction temperature (Tj) | Marking |
| SD103AW | 40 V | 28 V | 350 mA | 500 mW | 40 V (IR=100A) | 0.37 V (IF=20mA) | 5.0 A (VR=30V) | 50 pF (VR=0V,f=1.0MHz) | 10 ns (IF=IR=200mA, Irr=0.1XIR,RL=100) | -55~+150 | 125 | S4 |
| SD103BW | 30 V | 21 V | 350 mA | 500 mW | 30 V (IR=100A) | 0.37 V (IF=20mA) | 5.0 A (VR=20V) | 50 pF (VR=0V,f=1.0MHz) | 10 ns (IF=IR=200mA, Irr=0.1XIR,RL=100) | -55~+150 | 125 | S5 |
| SD103CW | 20 V | 14 V | 350 mA | 500 mW | 20 V (IR=100A) | 0.60 V (IF=200mA) | 5.0 A (VR=10V) | 50 pF (VR=0V,f=1.0MHz) | 10 ns (IF=IR=200mA, Irr=0.1XIR,RL=100) | -55~+150 | 125 | S6 |
2410121257_JSCJ-SD103CW-_C21572.pdf
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