Schottky Diode JSCJ RB717F Designed for Low Forward Voltage and Reverse Voltage in Power Applications

Key Attributes
Model Number: RB717F
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@10V
Non-Repetitive Peak Forward Surge Current:
200mA
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
370mV@1mA
Current - Rectified:
30mA
Mfr. Part #:
RB717F
Package:
SOT-323
Product Description

Product Overview

The RB717F is a Schottky barrier diode designed for high reliability applications. It features low forward voltage (VF) and low reverse voltage (VR), making it suitable for various electronic circuits requiring efficient power management and signal processing.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
  • Marking: 3E
  • Material: Plastic-Encapsulate Diodes
  • Molding Compound: Solid dot = Green molding compound device, if none, the normal device.
  • Origin: China (implied by manufacturer location and website)

Technical Specifications

ParameterSymbolLimitUnitTest ConditionsMinTypMax
Maximum RatingsVRM40V
VR40V
IFSM200mA@t=8.3ms
Average forward currentIO30mA@Ta=25
Power dissipationPD200mW@Ta=25
Storage Temperature RangeTstg-55 ~ +150
Operating Junction Temperature RangeTj-40 ~ +125
Thermal Resistance Junction to AmbientRJA500/W
Electrical CharacteristicsIR1AVR=10V
VF0.37VIF=1mA
Capacitance between terminalsCT2.0pFVR=1V, f=1MHz

2410121807_JSCJ-RB717F_C5295451.pdf

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