Schottky Diode JSCJ RB717F Designed for Low Forward Voltage and Reverse Voltage in Power Applications
Key Attributes
Model Number:
RB717F
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@10V
Non-Repetitive Peak Forward Surge Current:
200mA
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
370mV@1mA
Current - Rectified:
30mA
Mfr. Part #:
RB717F
Package:
SOT-323
Product Description
Product Overview
The RB717F is a Schottky barrier diode designed for high reliability applications. It features low forward voltage (VF) and low reverse voltage (VR), making it suitable for various electronic circuits requiring efficient power management and signal processing.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Marking: 3E
- Material: Plastic-Encapsulate Diodes
- Molding Compound: Solid dot = Green molding compound device, if none, the normal device.
- Origin: China (implied by manufacturer location and website)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions | Min | Typ | Max |
| Maximum Ratings | VRM | 40 | V | ||||
| VR | 40 | V | |||||
| IFSM | 200 | mA | @t=8.3ms | ||||
| Average forward current | IO | 30 | mA | @Ta=25 | |||
| Power dissipation | PD | 200 | mW | @Ta=25 | |||
| Storage Temperature Range | Tstg | -55 ~ +150 | |||||
| Operating Junction Temperature Range | Tj | -40 ~ +125 | |||||
| Thermal Resistance Junction to Ambient | RJA | 500 | /W | ||||
| Electrical Characteristics | IR | 1 | A | VR=10V | |||
| VF | 0.37 | V | IF=1mA | ||||
| Capacitance between terminals | CT | 2.0 | pF | VR=1V, f=1MHz |
2410121807_JSCJ-RB717F_C5295451.pdf
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