Schottky Barrier Diode JSCJ BAS40-04T Low Forward Voltage Fast Switching for Electronic Applications
Key Attributes
Model Number:
BAS40-04T
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
200nA@30V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
200mA
Mfr. Part #:
BAS40-04T
Package:
SOT-523
Product Description
Product Overview
The BAS40T series are Schottky barrier diodes featuring low forward voltage and fast switching speeds. These diodes are suitable for various electronic applications requiring efficient rectification and signal processing.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-523
Technical Specifications
| Model | Peak Repetitive Peak Reverse Voltage (VRRM) | Working Peak Reverse Voltage (VRWM) | DC Blocking Voltage (VR) | Forward Continuous Current (IFM) | Average Rectified Output Current (IO) | Non-Repetitive Peak Forward Surge Current (IFSM) @ t = 8.3ms | Power Dissipation (PD) | Reverse Breakdown Voltage (VBR) @ IR=10A | Forward Voltage (VF1) @ IF=1mA | Forward Voltage (VF2) @ IF=40mA | Reverse Current (IR) @ VR=30V | Diode Capacitance (CD) @ VR=0, f=1MHz | Reverse Recovery Time (trr) @ IF=IR=10mA, Irr=0.1*IR, RL=100 |
| BAS40T/-04T/-05T/-06T | 40 V | 40 V | 40 V | 200 mA | 200 mA | 0.6 A | 150 mW | 40 V | 0.38 V | 1 V | 0.2 A | 5 pF | 5 ns |
2410121717_JSCJ-BAS40-04T_C5295414.pdf
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