Plastic Encapsulated Schottky Diode JSCJ AD-B5819W for Low Voltage Applications and Polarity Protection
Key Attributes
Model Number:
AD-B5819W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Reverse Leakage Current (Ir):
1mA
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
900mV
Current - Rectified:
1A
Mfr. Part #:
AD-B5819W
Package:
SOD-123
Product Description
Product Overview
The AD-B5817W/18W/19W is a plastic-encapsulated Schottky barrier diode designed for high-frequency inverters, low voltage applications, and free-wheeling. It also serves as a polarity protection diode and is AEC-Q101 qualified.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Certifications: AEC-Q101 qualified
Technical Specifications
| Parameter | Symbol | AD-B5817W | AD-B5818W | AD-B5819W | Unit |
| DC blocking voltage | VR | 20 | 30 | 40 | V |
| Working Peak Reverse Voltage | VRWM | V | |||
| RMS reverse voltage | VR(RMS) | 14 | 21 | 28 | V |
| Forward current | IO | 1 | A | ||
| Non-repetitive peak forward surge current @ t = 8.3ms | IFSM | 9 | A | ||
| Repetitive peak forward current | IFRM | 1.5 | A | ||
| Power dissipation | PD | 500 | mW | ||
| Thermal resistance from junction to ambient | RJA | 200 | C/W | ||
| Operating junction temperature range | Tj | -40 ~ 125 | C | ||
| Storage temperature range | Tstg | -55 ~ 150 | C | ||
| Reverse breakdown voltage (IR = 1mA) | V(BR) | 20 | 30 | 40 | V |
| Forward voltage (IF = 1A) | VF | 0.45 | 0.55 | 0.6 | V |
| Forward voltage (IF = 3A) | VF | 0.75 | 0.875 | 0.9 | V |
| Reverse current (VR = 20V) | IR | 1 | mA | ||
| Reverse current (VR = 30V) | IR | 1 | mA | ||
| Reverse current (VR = 40V) | IR | 1 | mA | ||
| Diode capacitance (VR = 4V, f = 1MHz) | CD | 120 | pF | ||
2410121913_JSCJ-AD-B5819W_C2975704.pdf
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