Fast switching diode JSCJ AD-1N4448W surface mount package low reverse current AECQ101 qualified
Key Attributes
Model Number:
AD-1N4448W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
2.5uA
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
AD-1N4448W
Package:
SOD-123
Product Description
Product Overview
The AD-1N4448W is a fast switching diode in a small surface mount package, ideally suited for automatic insertion. It features low reverse current and is AEC-Q101 qualified, making it suitable for various electronic applications requiring high-speed switching and reliability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Model: AD-1N4448W
- Package Type: Plastic-Encapsulated Diode, Surface Mount
- Certifications: AEC-Q101 qualified
- Marking: T5 (Device code), marking bar indicates cathode
- Origin: China
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | |
| DC blocking voltage | VR | 75 | V | |
| Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage | VRRM / VRWM | V | ||
| RMS reverse voltage | VR(RMS) | 53 | V | |
| Forward Continuous Current | IFM | 500 | mA | |
| Average Rectified Output Current | IO | 250 | mA | |
| Non-repetitive peak forward surge current @ t = 8.3ms | IFSM | 2 | A | |
| Power dissipation | PD | 500 | mW | |
| Thermal resistance from junction to ambient | RJA | 250 | C/W | |
| Storage temperature range | Tstg | -55 ~ 150 | C | |
| Reverse breakdown voltage | V(BR)R | IR = 10A | 75 | V |
| Forward voltage | VF1 | IF = 5mA | 0.62 ~ 0.72 | V |
| Forward voltage | VF2 | IF = 10mA | 0.855 | V |
| Forward voltage | VF3 | IF = 100mA | 1 | V |
| Forward voltage | VF4 | IF = 150mA | 1.25 | V |
| Reverse current | IR1 | VR = 75V | 2.5 | A |
| Reverse current | IR2 | VR = 20V | 25 | nA |
| Reverse recovery time | Trr | IF = IR = 10mA, Irr = 0.1XIR, RL= 100 | 4 | ns |
| Capacitance between terminals | CT | VR = 0V, f = 1MHz | 4 | pF |
2410122018_JSCJ-AD-1N4448W_C2975583.pdf
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