Schottky diode JSCJ SD107WS designed for low forward voltage drop and transient protection circuits
Key Attributes
Model Number:
SD107WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@25V
Operating Junction Temperature Range:
-40℃~+125℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
500mV@100mA
Current - Rectified:
100mA
Mfr. Part #:
SD107WS
Package:
SOD-323
Product Description
Product Overview
The SD107WS Schottky Barrier Diode is designed for low logic level applications, featuring a low forward voltage drop and guard ring die construction for transient protection. Its low capacitance makes it suitable for various electronic circuits. This diode is also available in a lead-free version.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Marking: SG
- Molding Compound Color: Green (if solid dot present)
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Forward voltage | VF | IF=2mA | 300 | mV | ||
| IF=15mA | 360 | mV | ||||
| IF=50mA | 430 | mV | ||||
| IF=100mA | 500 | mV | ||||
| 550 | 800 | mV | ||||
| Reverse current | IR | VR=25V | 1 | A | ||
| Capacitance between terminals | CT | VR=10V,f=1MHz | 7 | pF | ||
| Non-repetitive peak reverse voltage | VRM | 30 | V | |||
| Forward current | IFM | 100 | mA | |||
| Non-repetitive Peak Forward Surge Current | IFSM | @t = 8.3ms | 2 | A | ||
| Power dissipation | Ptot | TC=25 | 250 | mW | ||
| Thermal resistance junction to ambient | JA | 400 | /W | |||
| Operating Junction Temperature Range | TJ | -40 | +125 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Reverse breakdown voltage | VR | IR=100A | 30 | V |
2409300133_JSCJ-SD107WS_C77360.pdf
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