low forward voltage Schottky diode JSCJ RB411D in compact surface mount package for electronic devices

Key Attributes
Model Number: RB411D
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
3A
Reverse Leakage Current (Ir):
30uA@10V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
500mV@500mA
Current - Rectified:
500mA
Mfr. Part #:
RB411D
Package:
SOT-23
Product Description

Product Overview

The RB411D is a Schottky barrier diode in a small surface mounting type package. It offers low reverse current and low forward voltage, ensuring high reliability. This diode is suitable for various electronic applications requiring efficient rectification and low power loss.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China (implied by manufacturer)
  • Package Type: SOT-23
  • Marking: D3E

Technical Specifications

ParameterSymbolLimit/MinTyp.Max.UnitCondition
RMS reverse voltageVRM40V
RMS reverse voltageVR(RMS)28V
Mean rectifying output currentIO500mA
Non-repetitive Peak Forward Surge Current@t=8.3msIFSM3A
Forward voltageVF10.3VIF=10mA
Forward voltageVF20.5VIF=500mA
Reverse currentIR30AVR=10V
Capacitance between terminalsCT20pFVR=10V,f=1MHz
Operating Junction Temperature RangeTj-40+125
Storage Temperature RangeTstg-55+150
Thermal Resistance Junction to AmbientRJA500/W
Power DissipationPD200mW
DC reverse voltageVR20V
Reverse breakdown voltageVR20VIR=100A

2410121931_JSCJ-RB411D_C2910221.pdf

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