High Speed Switching Plastic Encapsulated Diode JSCJ AD-1N4148WS Ideal for Surface Mount Applications

Key Attributes
Model Number: AD-1N4148WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Voltage - DC Reverse (Vr) (Max):
100V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
AD-1N4148WS
Package:
SOD-323
Product Description

Product Overview

The AD-BAV16WS/1N4148WS is a plastic-encapsulated Schottky barrier diode designed for general-purpose switching applications. It features high switching speed and a surface mount package suitable for automatic insertion. This diode is AEC-Q101 qualified.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
  • Origin: China
  • Certifications: AEC-Q101 qualified

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Non-repetitive peak reverse voltageVRM100V
Peak repetitive reverse voltageVRRM100V
Working peak reverse voltageVRWM100V
DC blocking voltageVR100V
RMS reverse voltageVR(RMS)71V
Forward continuous currentIFM300mA
Average rectified output currentIO150mA
Non-repetitive peak forward surge currentIFSM@ t = 8.3ms2.0A
Power dissipationPD200mW
Thermal resistance from junction to ambientRJA1)625C/W
Operating junction and storage temperature rangeTj, Tstg-55150C
Forward voltageVF1IF = 1mA0.715V
Forward voltageVF2IF = 10mA0.855V
Forward voltageVF3IF = 50mA1.0V
Forward voltageVF4IF = 150mA1.25V
Reverse currentIR1VR = 75V1A
Reverse currentIR2VR = 20V25nA
Capacitance between terminalsCTVR = 0V, f = 1MHz2pF
Reverse recovery timetrrIF = IR = 10mA, Irr = 1mA, RL = 1004ns

1) Measured with the device mounted on 1 inch2 FR-4 board with 1oz. single-side copper, in a still air environment with Ta = 25.


2410121931_JSCJ-AD-1N4148WS_C2975696.pdf

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