Small Surface Mounting Silicon Switching Diode JSCJ DK400LED02 Ideal for High Speed Portable Equipment
Key Attributes
Model Number:
DK400LED02
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
100mW
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
150mA
Mfr. Part #:
DK400LED02
Package:
WBFBP-02C
Product Description
Product Overview
The DK400LED02 is a silicon epitaxial planar switching diode designed for high-speed switching applications. It features small surface mounting, high reliability, and high surge current handling capability, making it ideal for detection purposes in portable equipment such as mobile phones, MP3 players, MD players, CD-ROMs, DVD-ROMs, and notebook PCs.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Silicon Epitaxial Planar
- Package Type: Small Surface Mounting Type, Plastic-Encapsulate Diodes (DFN/FBP(1.0X0.6))
- Marking: 7
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Peak Reverse Voltage | VRM | 90 | V | |
| DC Reverse Voltage | VR | 80 | V | |
| Peak Forward Current | IFM | 300 | mA | |
| Average Rectified Output Current | IO | 150 | mA | |
| Forward Surge Current (Non-Repetitive Peak) | IFSM | 2.0 | A | @t=8.3ms |
| Operation Junction and Storage Temperature Range | Tj ,TSTG | -55~+150 | ||
| Power Dissipation | PD | 100 | mW | @Ta=25 |
| Forward voltage | VF | 1.2 | V | IF=100mA |
| Reverse current | IR | 0.1 | A | VR=80V |
| Capacitance between terminals | CT | 3.0 | pF | VR=0.5V, f=1MHz |
| Reverse recovery time | trr | 4 | ns | VR=6V,IF=10mA,RL=100 |
| Thermal resistance (Junction to Ambient) | RJA | 1250 | /W |
2410121931_JSCJ-DK400LED02_C2910448.pdf
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