High switching speed diode JSCJ MMBD4448HTS suitable for general purpose electronic circuit applications
Key Attributes
Model Number:
MMBD4448HTS
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-65℃~+150℃
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
MMBD4448HTS
Package:
SOT-523
Product Description
Product Overview
The MMBD4448HT series is a high-performance switching diode designed for general-purpose applications. It features fast switching speeds and high conductance, making it suitable for various electronic circuits requiring efficient signal switching.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-523
- Material: Plastic-Encapsulate Diodes
- Markings: MMBD4448HTA (A3), MMBD4448HTC (A6), MMBD4448HTS (A7), MMBD4448HT (AB)
- Molding Compound: Solid dot = Green molding compound device, if none, the normal device.
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Reverse breakdown voltage | VR | 80 | V | IR=2.5 A | ||
| Forward voltage | VF1 | 0.62 | 0.72 | V | IF=5mA | |
| Forward voltage | VF2 | 0.855 | V | IF=10mA | ||
| Forward voltage | VF3 | 1.0 | V | IF=100mA | ||
| Forward voltage | VF4 | 1.25 | V | IF=150mA | ||
| Reverse current | IR1 | 0.1 | A | VR=70V | ||
| Reverse current | IR2 | 25 | nA | VR=20V | ||
| Capacitance between terminals | CT | 3.5 | pF | VR=6V,f=1MHz | ||
| Reverse recovery time | trr | 4 | ns | IF=IR=10mA Irr=0.1XIR,RL=100 | ||
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | |||
| Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | VRRM VRWM VR | 80 | V | |||
| RMS Reverse Voltage | VR(RMS) | 57 | V | |||
| Forward Continuous Current | IFM | 500 | mA | |||
| Average Rectified Output Current | IO | 250 | mA | |||
| Forward Surge Current @t=8.3ms | IFSM | 2.0 | A | |||
| Power Dissipation | Pd | 150 | mW | @Ta=25 | ||
| Thermal Resistance from Junction to Ambient | RJA | 833 | /W | |||
| Operation Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 |
2410121931_JSCJ-MMBD4448HTS_C2910269.pdf
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