Diode Rectifier JSCJ SBD20200CT Plastic Encapsulated Schottky Barrier with Low Forward Voltage Drop

Key Attributes
Model Number: SBD20200CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
100uA@200V
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
760mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBD20200CT
Package:
TO-220-3L
Product Description

Product Overview

The SBD20200CT and SBDF20200CT are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various power applications.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Product Codes: SBD20200CT, SBDF20200CT
  • Construction: Guard Ring Die Construction for Transient Protection
  • Marking: SBD20200CT XXXX (XXXX = Code), SBD F20200CT
  • Encapsulation: Plastic-Encapsulate Diode

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnitSBD20200CTSBDF20200CT
Peak repetitive reverse voltageVRRM200V
Working peak reverse voltageVRWM200V
DC blocking voltageVR200V
RMS reverse voltageVR(RMS)140V
Average rectified output currentIO20A
Non-Repetitive peak forward surge current (8.3ms half sine wave)IFSM150A
Thermal resistance from junction to ambientRJA62.5/W
Thermal resistance from junction to caseRJcTc=252.03.0/W
Junction temperatureTj-55150
Storage temperatureTstg-55150
Reverse voltageV(BR)IR = 1mA200V
Reverse currentIRVR = 200V0.0010.1mA
Forward voltageVFIF = 10A0.680.8V
Forward voltageVFIF = 20A0.761.0V
Forward voltageVFIF = 5A, Tj = 250.76V
Forward voltageVFIF = 5A, Tj = 1250.86V
Forward voltageVFIF = 10A, Tj = 250.8V
Forward voltageVFIF = 10A, Tj = 1250.95V
Total CapacitanceCTOTf = 1 MHz, Tj = 25150pF

2411121115_JSCJ-SBD20200CT_C496866.pdf

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