Rectification with JSCJ MURS120 SMAG Plastic Encapsulate Diodes Super Fast Recovery Rectifier Diodes
Key Attributes
Model Number:
MURS120(SMAG)
Product Custom Attributes
Reverse Leakage Current (Ir):
2uA
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
25ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
875mV@1.0A
Current - Rectified:
1A
Mfr. Part #:
MURS120(SMAG)
Package:
SMAG
Product Description
Product Overview
The MURS120 THRU MURS160 series are Super Fast Recovery Rectifier Diodes designed for high-efficiency rectification. They offer high surge current capability and are suitable for various rectifier applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: SMAG Plastic-Encapsulate Diodes
- Polarity: Color band denotes cathode
Technical Specifications
| Item | Symbol | Unit | MURS120 | MURS140 | MURS160 | Test Conditions |
|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | V | 200 | 400 | 600 | |
| Average Forward Current | IF(AV) | A | 1.0 | 60Hz Half-sine wave, Resistance load, Ta=100 | ||
| Surge(Non-repetitive)Forward Current | IFSM | A | 30 | 60Hz Half-sine wave, 1 cycle, Ta=25 | ||
| Peak Forward Voltage | VFM | V | 0.875 | IFM =1.0A | ||
| Reverse recovery time | trr | ns | 5 | IF=0.5A,IR=1.0A,VRM=VRRM | ||
| Peak Reverse Current | IRRM | A | 50 | |||
| Thermal Resistance (Typical) | R J-A | /W | 55 | Between junction and ambient | ||
| Thermal Resistance (Typical) | R J-L | /W | 17 | Between junction and lead | ||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 ~ +150 | ||||
| Maximum RMS Voltage | VRMS | V | 140 | |||
| Maximum RMS Voltage | VRMS | V | 280 | |||
| Maximum RMS Voltage | VRMS | V | 420 | |||
2410121947_JSCJ-MURS120-SMAG_C5356759.pdf
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