Plastic Encapsulated Schottky Diode Array JSCJ BAS70TW with Fast Switching Speeds and ESD Protection
Key Attributes
Model Number:
BAS70TW
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100mA
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@15mA
Mfr. Part #:
BAS70TW
Package:
SOT-363
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD BAS70 series are Schottky Barrier Diode Arrays in a SOT-363 plastic-encapsulated package. These diodes feature a low forward voltage drop, fast switching speeds, and a PN junction guard ring for transient and ESD protection. They are available in lead-free versions.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Material: Plastic-Encapsulated
- Color: Green molding compound (if solid dot is present)
Technical Specifications
| Model | VRRM (V) | VRWM (V) | VR (V) | VR(RMS) (V) | IO (mA) | IFSM (mA) | PD (mW) | RJA (/W) | Tj () | Tstg () | V(BR) (V) | IR (A) | VF (V) | Ctot (pF) | trr (ns) |
| BAS70BRW /BAS70DW-04 / BAS70DW-05 / BAS70DW-06 / BAS70TW | 70 | 70 | 70 | 49 | 70 | 100 | 200 | 500 | 125 | -55~+150 | 70 | 0.1 | 0.41 (at IF=1mA) / 1 (at IF=15mA) | 2 (at VR=0V, f=1MHz) | 5 (at IF=IR=10mA to IR=1mA, Irr=0.1IR, RL=100) |
2410121238_JSCJ-BAS70TW_C77308.pdf
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