N Channel MOSFET JSCJ CJ2102A designed for power management in portable and DC DC converter devices
Key Attributes
Model Number:
CJ2102A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.1A
RDS(on):
115mΩ@2.5V,3.1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@50uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
330pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
CJ2102A
Package:
SOT-323
Product Description
CJ2102A N-Channel MOSFET
The CJ2102A is a TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power management with low on-resistance characteristics.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Type: N-Channel MOSFET
- Package: SOT-323
- Origin: China (implied by manufacturer name and website)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =10A | 20 | V | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =50A | 0.65 | 0.75 | 1.2 | V |
| Gate-body leakage | IGSS | VDS =0V, VGS =8V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =20V, VGS =0V | 1 | A | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =3.6A | 0.033 | 0.068 | ||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =3.1A | 0.043 | 0.115 | ||
| Forward transconductance | gfs | VDS =5V, ID =3.6A | 7.2 | S | ||
| Diode forward voltage | VSD | IS=0.94A,VGS=0V | 0.76 | 1.2 | V | |
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =3.6A | 4.0 | 10 | nC | |
| Gate-source charge | Qgs | VDS =10V,VGS =4.5V,ID =3.6A | 0.65 | nC | ||
| Gate-drain charge | Qgd | VDS =10V,VGS =4.5V,ID =3.6A | 1.5 | nC | ||
| Input capacitance | Ciss | VDS =10V,VGS =0V,f=1MHz | 330 | pF | ||
| Output capacitance | Coss | VDS =10V,VGS =0V,f=1MHz | 60 | pF | ||
| Reverse transfer capacitance | Crss | VDS =10V,VGS =0V,f=1MHz | 50 | pF | ||
| Turn-on delay time | td(on) | VDD=10V, RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 | 7 | 15 | ns | |
| Rise time | tr | VDD=10V, RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 | 55 | 80 | ns | |
| Turn-off delay time | td(off) | VDD=10V, RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 | 16 | 60 | ns | |
| Fall time | tf | VDD=10V, RL=5.5, ID 3.6A, VGEN=4.5V,Rg=6 | 10 | 25 | ns |
2410121839_JSCJ-CJ2102A_C19267744.pdf
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