High voltage PNP transistor JSMSEMI MMBTA92 ideal choice for medium power switching and amplification
Product Overview
The MMBTA92 is a PNP high voltage amplifier transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications, particularly in high voltage driver circuits. A complementary NPN type, the MMBTA42, is also available.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Max. | Unit |
|---|---|---|---|---|---|
| MAXIMUM RATING @ Ta=25 | |||||
| VCBO | Collector-base voltage | -300 | V | ||
| VCEO | Collector-emitter voltage | -300 | V | ||
| VEBO | Emitter-base voltage | -5 | V | ||
| IC | Collector current (DC) | -0.5 | A | ||
| RJA | Thermal resistance, junction to ambient | 417 | C/W | ||
| PC | Collector dissipation | 0.3 | W | ||
| Tj ,Tstg | Junction and storage temperature | -55 to +150 | C | ||
| ELECTRICAL CHARACTERISTICS @ Ta=25 | |||||
| V(BR)CBO | Collector-base breakdown voltage | IC=-100A,IE=0 | -300 | V | |
| V(BR)CEO | Collector-emitter breakdown voltage | IC=-1mA,IB=0 | -300 | V | |
| V(BR)EBO | Emitter-base breakdown voltage | IE=-100A,IC=0 | -5 | V | |
| ICBO | Collector cut-off current | IE = 0; VCB = -200V | - | -0.25 | A |
| IEBO | Emitter cut-off current | IC = 0; VEB = -3V | - | -0.1 | A |
| hFE | DC current gain | VCE = -10V; IC= -1mA | 25 | ||
| VCE = -10V;IC= -10mA | 40 | ||||
| VCE = -10V;IC= -30mA | 25 | ||||
| VCE(sat) | Collector-emitter saturation voltage | IC = -20mA; IB = -2mA | - | -0.5 | V |
| VBE(sat) | Base-emitter saturation voltage | IC = -20mA; IB = -2mA | - | -0.9 | V |
| Cob | Collector output capacitance | VCB=-20V,f=1.0MHz | - | 6.0 | pF |
| fT | Transition frequency | IC = -10mA; VCE = -20V; f = 100MHz | 50 | - | MHz |
Package Information
Device: MMBTA92
Package: SOT-23
Shipping: 3000/Tape&Reel
2308071512_JSMSEMI-MMBTA92_C916395.pdf
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