High voltage PNP transistor JSMSEMI MMBTA92 ideal choice for medium power switching and amplification

Key Attributes
Model Number: MMBTA92
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
50MHz
Type:
-
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBTA92
Package:
SOT-23
Product Description

Product Overview

The MMBTA92 is a PNP high voltage amplifier transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications, particularly in high voltage driver circuits. A complementary NPN type, the MMBTA42, is also available.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Package Type: SOT-23

Technical Specifications

SymbolParameterTest ConditionsMin.Max.Unit
MAXIMUM RATING @ Ta=25
VCBOCollector-base voltage-300V
VCEOCollector-emitter voltage-300V
VEBOEmitter-base voltage-5V
ICCollector current (DC)-0.5A
RJAThermal resistance, junction to ambient417C/W
PCCollector dissipation0.3W
Tj ,TstgJunction and storage temperature-55 to +150C
ELECTRICAL CHARACTERISTICS @ Ta=25
V(BR)CBOCollector-base breakdown voltageIC=-100A,IE=0-300V
V(BR)CEOCollector-emitter breakdown voltageIC=-1mA,IB=0-300V
V(BR)EBOEmitter-base breakdown voltageIE=-100A,IC=0-5V
ICBOCollector cut-off currentIE = 0; VCB = -200V--0.25A
IEBOEmitter cut-off currentIC = 0; VEB = -3V--0.1A
hFEDC current gainVCE = -10V; IC= -1mA25
VCE = -10V;IC= -10mA40
VCE = -10V;IC= -30mA25
VCE(sat)Collector-emitter saturation voltageIC = -20mA; IB = -2mA--0.5V
VBE(sat)Base-emitter saturation voltageIC = -20mA; IB = -2mA--0.9V
CobCollector output capacitanceVCB=-20V,f=1.0MHz-6.0pF
fTTransition frequencyIC = -10mA; VCE = -20V; f = 100MHz50-MHz

Package Information

Device: MMBTA92
Package: SOT-23
Shipping: 3000/Tape&Reel


2308071512_JSMSEMI-MMBTA92_C916395.pdf

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