Small Signal N Channel MOSFET JSCJ 2N7002KW SOT 323 Package with High Saturation Current Capability
Key Attributes
Model Number:
2N7002KW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
2.5Ω@10V,340mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
2N7002KW
Package:
SOT-323
Product Description
Product Overview
The 2N7002KW is a N-Channel MOSFET in a SOT-323 plastic package, designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(on), is rugged and reliable, offers high saturation current capability, and is ESD protected. This MOSFET is suitable for various applications requiring efficient switching and low on-resistance.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by manufacturer's name and website)
- Package Type: SOT-323
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =1mA | 1 | 1.3 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS =48V,VGS = 0V | 1 | A | ||
| Gate-Source Leakage Current | IGSS | VGS =20V, VDS = 0V | 10 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS =4.5V, ID =200mA | 1.1 | 3 | ||
| VGS =10V, ID =500mA | 0.9 | 2.5 | ||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 30 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 10 | pF | ||
| Turn-on Delay Time | td(on) | VGS=10V,VDD=50V, RG=50, RGS=50, RL=250 | 10 | ns | ||
| Turn-off Delay Time | td(off) | VGS=10V,VDD=50V, RG=50, RGS=50, RL=250 | 15 | ns | ||
| Reverse Recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dIs/dt=-100A/us | 30 | ns | ||
| Recovered Charge | Qr | VGS=0V,IS=300mA,VR=25V, dIs/dt=-100A/us | 30 | nC | ||
| Gate-Source Breakdown Voltage | BVGSO | Igs=f1mA(Open Drain) | 21.5 | 30 | V | |
| Diode Forward Voltage | VSD | IS=300mA, VGS = 0V | 1.5 | V | ||
| Continuous Diode Forward Current | IS | 0.2 | A | |||
| Pulsed Diode Forward Current | ISM | 0.53 | A |
2409301633_JSCJ-2N7002KW_C504047.pdf
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