Planar die construction medium current Zener diode JSCJ BZT52B13S for diverse electronic applications

Key Attributes
Model Number: BZT52B13S
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
30Ω
Diode Configuration:
Independent
Zener Voltage(Range):
12.74V~13.26V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
13V
Impedance(Zzk):
170Ω
Mfr. Part #:
BZT52B13S
Package:
SOD-323
Product Description

Product Overview

The BZT52B2V4S-BZT52B39S series are general-purpose, medium current Zener diodes featuring a planar die construction. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes are designed for reliable performance in various electronic applications.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Type NumberType CodeZener Voltage Range (Note 2) Nom(V)Min(V)Max(V)IZT (mA)ZZT@IZT ()IR (A)VR (V)Power Dissipation (Note 1) Pd (mW)Thermal Resistance RJA (C/W)Operation Junction and Storage Temperature Range (C)Typical Temperature Coefficent @IZTC Test Current IZTC (mV/C)Forward Voltage (Note 2) @ IF = 10mA VF (V)
BZT52B2V4S2WX2.42.352.4551001.050200625-55 ~ +150-3.50.9
BZT52B2V7S2W12.72.652.7551001.020200625-55 ~ +150-3.50.9
BZT52B3V0S2W23.02.943.065951.010200625-55 ~ +150-3.50.9
BZT52B3V3S2W33.33.233.375951.05200625-55 ~ +150-3.50.9
BZT52B3V6S2W43.63.533.675901.05200625-55 ~ +150-3.50.9
BZT52B3V9S2W53.93.823.985901.03200625-55 ~ +150-3.50.9
BZT52B4V3S2W64.34.214.395901.03200625-55 ~ +150-3.50.9
BZT52B4V7S2W74.74.614.795802.03200625-55 ~ +150-3.50.9
BZT52B5V1S2W85.15.005.205602.02200625-55 ~ +150-2.70.9
BZT52B5V6S2W95.65.495.715402.01200625-55 ~ +150-2.00.9
BZT52B6V2S2WA6.26.086.325104.03200625-55 ~ +1500.40.9
BZT52B6V8S2WB6.86.666.945154.02200625-55 ~ +1501.20.9
BZT52B7V5S2WC7.57.357.655155.01200625-55 ~ +1502.50.9
BZT52B8V2S2WD8.28.048.365155.00.7200625-55 ~ +1503.20.9
BZT52B9V1S2WE9.18.929.285156.00.5200625-55 ~ +1503.80.9
BZT52B10S2WF109.8010.205207.00.2200625-55 ~ +1504.50.9
BZT52B11S2WG1110.7811.225208.00.1200625-55 ~ +1505.40.9
BZT52B12S2WH1211.7612.245258.00.1200625-55 ~ +1506.00.9
BZT52B13S2WI1312.7413.265308.00.1200625-55 ~ +1507.00.9
BZT52B15S2WJ1514.7015.3053010.50.1200625-55 ~ +1509.20.9
BZT52B16S2WK1615.6816.3254011.20.1200625-55 ~ +15010.40.9
BZT52B18S2WL1817.6418.3654512.60.1200625-55 ~ +15012.40.9
BZT52B20S2WM2019.6020.4055514.00.1200625-55 ~ +15014.40.9
BZT52B22S2WN2221.5622.4455515.40.1200625-55 ~ +15016.40.9
BZT52B24S2WO2423.5224.4857016.80.1200625-55 ~ +15018.40.9
BZT52B27S2WP2726.4627.5428018.90.1200625-55 ~ +15021.40.9
BZT52B30S2WQ3029.4030.6028021.00.1200625-55 ~ +15024.40.9
BZT52B33S2WR3332.3433.6628023.10.1200625-55 ~ +15027.40.9
BZT52B36S2WS3635.2836.7229025.20.1200625-55 ~ +15030.40.9
BZT52B39S2WT3938.2239.78213027.30.1200625-55 ~ +15033.40.9

Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.


2410121536_JSCJ-BZT52B13S_C2910081.pdf

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