JSCJ CJK3401 Plastic Encapsulated P Channel FET Designed for Portable Electronics and Load Switching
Key Attributes
Model Number:
CJK3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
60mΩ@10V;70mΩ@4.5V;85mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.3V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 P-Channel
Output Capacitance(Coss):
127pF
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
450mW
Mfr. Part #:
CJK3401
Package:
SOT-23
Product Description
Product Overview
The CJK3401A is a P-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed with a high-density cell for extremely low RDS(ON). It offers exceptional on-resistance and is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by brand and datasheet language)
- Material: Plastic-Encapsulated
- Color: Solid dot = Green molding compound device, if none, the normal device.
- Certifications: None explicitly mentioned.
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | -4.2 | A | |||
| Power Dissipation | PD | 450 | mW | |||
| Thermal Resistance from Junction to Ambient (t<5s) | RJA | 313 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V,VGS = 0V | -1 | A | ||
| Gate-source leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA | ||
| On Characteristics | ||||||
| Drain-source on-resistance (note 1) | RDS(on) | VGS =-10V, ID =-4.2A | 60 | m | ||
| Drain-source on-resistance (note 1) | RDS(on) | VGS =-4.5V, ID =-4A | 70 | m | ||
| Drain-source on-resistance (note 1) | RDS(on) | VGS =-2.5V,ID=-1A | 85 | m | ||
| Forward tranconductance (note 1) | gFS | VDS =-5V, ID =-5A | 7 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.7 | -1.3 | V | |
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V,f =1MHz | 1050 | pF | ||
| Output capacitance | Coss | VDS =-15V,VGS =0V,f =1MHz | 127 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-15V,VGS =0V,f =1MHz | 85 | pF | ||
| Switching Characteristics (note 2) | ||||||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 6.5 | ns | ||
| Turn-on rise time | tr | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 3.5 | ns | ||
| Turn-off delay time | td(off) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 40 | ns | ||
| Turn-off fall Time | tf | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 13 | ns | ||
| Drain-source diode characteristics and maximum ratings | ||||||
| Diode forward voltage (note 1) | VSD | IS=-1A,VGS=0V | -1 | V | ||
2410121551_JSCJ-CJK3401_C96624.pdf
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