N Channel MOSFET JSCJ 2N7002T HAF SOT 523 Package Low On Resistance Device for Portable Applications
Key Attributes
Model Number:
2N7002T-HAF
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
RDS(on):
5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002T-HAF
Package:
SOT-523
Product Description
Product Overview
The 2N7002T is an N-Channel MOSFET in a SOT-523 plastic-encapsulate package. It features a high-density cell design for low RDS(ON), acting as a voltage-controlled small-signal switch. This device is rugged, reliable, and offers high saturation current capability, making it suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JSCJ (JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD)
- Package: SOT-523
- Material: Plastic-Encapsulate
- Color: Green molding compound device (indicated by solid dot)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Electrical Characteristics | V(BR)DSS | VGS=0 V, ID=250 A | 60 | V | ||
| Vth(GS) | VDS=VGS, ID=250 A | 1 | 2.5 | V | ||
| lGSS | VDS=0 V, VGS=20 V | 80 | nA | |||
| IDSS | VDS=60 V, VGS=0 V | 80 | nA | |||
| ID(ON) | VGS=10 V, VDS=7 V | 500 | mA | |||
| On-State Resistance | RDS(on) | VGS=10 V, ID=500mA | 5 | |||
| RDS(on) | VGS=5 V, ID=50mA | 7 | ||||
| VDS(on) | VGS=10V, ID=500mA | 3.75 | V | |||
| VDS(on) | VGS=5V, ID=50mA | 0.375 | V | |||
| Diode Characteristics | VSD | IS=115mA, VGS=0 V | 0.55 | 1.2 | V | |
| gfs | VDS=10 V, ID=200mA | 80 | 500 | mS | ||
| Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 50 | pF | ||
| Coss | VDS=25V, VGS=0V, f=1MHz | 25 | pF | |||
| Crss | VDS=25V, VGS=0V, f=1MHz | 5 | pF | |||
| Switching Time | td(on) | VDD=25 V, RL=50 ID=500mA,VGEN=10 V RG=25 | 20 | ns | ||
| td(off) | VDD=25 V, RL=50 ID=500mA,VGEN=10 V RG=25 | 40 | ns |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Gate-Source voltage | VGS | 20 | V |
| Drain-Source voltage | VDS | 60 | V |
| Drain Current | ID | 115 | mA |
| Power Dissipation | PD | 150 | mW |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | Tstg | -55~+150 | |
| Thermal Resistance Junction to Ambient | RJA | 833 | /W |
2410121714_JSCJ-2N7002T-HAF_C2961243.pdf
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