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quality Compact Power N Channel MOSFET JSCJ CJ2312 with 20 Volt Drain Source Voltage and Thermal Performance factory
quality Compact Power N Channel MOSFET JSCJ CJ2312 with 20 Volt Drain Source Voltage and Thermal Performance factory

Compact Power N Channel MOSFET JSCJ CJ2312 with 20 Volt Drain Source Voltage and Thermal Performance

Key Attributes
Model Number: CJ2312
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-50℃~+150℃
RDS(on):
41.4mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 N-channel
Output Capacitance(Coss):
105pF
Input Capacitance(Ciss):
865pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
CJ2312
Package:
SOT-23
Product Description

Product Overview

The CJ2312 is a N-Channel 20-V(D-S) MOSFET in a SOT-23 package, designed for DC/DC converters and load switching in portable applications. It offers efficient power handling with a maximum power dissipation of 0.35 W and a junction temperature up to 150C.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Package: SOT-23
  • Marking: S12
  • Origin: China (implied by manufacturer location)
  • Material: Plastic-Encapsulate
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Maximum Ratings VDS 20 V
VGS 8.0 V
ID t=5s 5 A
IDM 20 A
IS 1.04 A
Power & Thermal PD t=5s 0.35 W
RJA 357 /W
TJ 150
Storage Temperature Tstg -50 ~+150
Electrical Characteristics (Static) V(BR)DSS VGS = 0V, ID =250A 20 V
IGSS VDS =0V, VGS =8V 100 nA
IDSS VDS =20V, VGS =0V 1.0 A
VGS(th) VDS =VGS, ID =250A 0.45 1.0 V
On-State Resistance RDS(on) VGS =4.5V, ID =5.0A 0.0318
RDS(on) VGS =2.5V, ID =4.7A 0.0356
RDS(on) VGS =1.8V, ID =4.3A 0.0414
gfS VDS =10V, ID =5.0A 6 S
Dynamic Characteristics Ciss VDS =10V,VGS =0V,f =1MHz 865 pF
Coss VDS =10V,VGS =0V,f =1MHz 105 pF
Crss VDS =10V,VGS =0V,f =1MHz 55 pF
Switching Characteristics td(on) VGEN=5V,VDD=10V, ID =4A,RG=1, RL=2.2 10 ns
tr VGEN=5V,VDD=10V, ID =4A,RG=1, RL=2.2 20 ns
td(off) VGEN=5V,VDD=10V, ID =4A,RG=1, RL=2.2 32 ns
tf VGEN=5V,VDD=10V, ID =4A,RG=1, RL=2.2 12 ns
Drain-Source Body Diode VSD VGS =0V,IS=4A 0.75 1.2 V

2409272232_JSCJ-CJ2312_C23521.pdf

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