Low RDS ON P Channel Power MOSFET JSCJ CJAB55P03A suitable for high current switching applications
Key Attributes
Model Number:
CJAB55P03A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.4mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
282pF
Number:
1 P-Channel
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
3.259nF@15V
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
CJAB55P03A
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB55P03A is a P-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current. The package offers good heat dissipation and special process technology provides high ESD capability. This MOSFET is suitable for battery and loading switching applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB55P03A
- Package: PDFNWB3.33.3-8L
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -55 | A | |||
| Pulsed Drain Current | IDM | -200 | A | |||
| Single Pulsed Avalanche Energy | EAS | 150 | mJ | |||
| Power Dissipation | PD | Tc=25 | 50 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 83.3 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 2.5 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (TJ=25 unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-1mA | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V, VGS =0V | -1.0 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -1.5 | -2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-15A | 6.5 | m | ||
| VGS =-4.5V, ID =-10A | 8.4 | m | ||||
| Total gate charge | Qg | VDS=-10V,ID=-10A, VGS=-4.5V | 30 | nC | ||
| Gate-source charge | Qgs | 8.7 | nC | |||
| Gate-drain charge | Qgd | 8.3 | nC | |||
| Capacitances (VDS =-15V,VGS =0V, f =1MHz) | ||||||
| Input capacitance | Ciss | 325 | pF | |||
| Output capacitance | Coss | 404 | pF | |||
| Reverse transfer capacitance | Crss | 282 | pF | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-10A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -55 | A | |||
| Pulsed drain-source diode forward current | ISM | -200 | A | |||
2410121917_JSCJ-CJAB55P03A_C5329675.pdf
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