High Current N Channel MOSFET JSCJ CJAC100SN08U 80V 100A Power Transistor for Fast Switching Circuits
Key Attributes
Model Number:
CJAC100SN08U
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
1.8nF
Pd - Power Dissipation:
104W
Input Capacitance(Ciss):
3.78nF
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
CJAC100SN08U
Package:
PDFNWB-8L(5X6)
Product Description
Product Description
These N-Channel enhancement mode power field effect transistors utilize SGT technology, offering minimized on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are ideal for high efficiency fast switching applications such as battery switches, load switches, and LED applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by manufacturer name)
- Material: Plastic-Encapsulate MOSFETS
Technical Specifications
| Part No. | VDS (V) | RDS(ON) TYP (m) | ID (A) | EAS (mJ) | RJA (/W) | RJC (/W) | TJ,Tstg () |
| CJAC100SN08U | 80 | 3.0m@10V | 100 | 500 | 62.5 | 1.2 | -55~+150 |
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =1mA | 80 | V | ||
| Zero gate voltage drain current | IDSS | VDS =64V, VGS =0V | 1.0 | 3.9 | A | |
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 2.0 | 2.8 | 4.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =30A | 3.0 | 4.0 | m | |
| Static drain-source on-state resistance | RDS(on) | VGS =6V, ID =30A | 6.0 | m | ||
| Input capacitance | Ciss | VDS =30V,VGS =0V, f =500kHz | 3780 | pF | ||
| Output capacitance | Coss | 1800 | ||||
| Reverse transfer capacitance | Crss | 25 | ||||
| Total gate charge | Qg | VGS=10V, VDS=20V, ID=20A | 60 | nC | ||
| Gate-source charge | Qgs | 14 | ||||
| Gate-drain charge | Qgd | 14 | ||||
| Turn-on delay time | td(on) | VDS=40V, VGS=10V, RL=2 | 80 | ns | ||
| Turn-on rise time | tr | |||||
| Turn-off delay time | td(off) | |||||
| Turn-off fall time | tf | |||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 100 | A | |||
| Pulsed drain-source diode forward current | ISM | 300 | A | |||
| Gate resistance | Rg | f =1MHz | 2.5 |
2410121713_JSCJ-CJAC100SN08U_C2906252.pdf
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