Power Management P Channel MOSFET JSCJ CJU30P10A with Low On Resistance and Robust Trench Technology
Key Attributes
Model Number:
CJU30P10A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
30A
RDS(on):
52mΩ@4.5V,15A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
136pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.765nF@20V
Pd - Power Dissipation:
89W
Mfr. Part #:
CJU30P10A
Package:
TO-252-2L
Product Description
Product Overview
The CJU30P10A is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide range of power management applications. Its reliable and rugged design with a high-density cell structure ensures ultra-low On-Resistance.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: TO-252-2L
- Material: Plastic-Encapsulate MOSFETS
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS ( TA=25 unless otherwise noted ) | ||||||
| Drain-Source Voltage | VDS | -100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -30 | A | |||
| Pulsed Drain Current | IDM | -120 | A | |||
| Single Pulsed Avalanche Energy | EAS | 205 | mJ | |||
| Power Dissipation | PD | 89 | W | |||
| Junction Temperature and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
| Thermal Resistance from Junction to Case | RJC | 1.4 | /W | |||
| MOSFET ELECTRICAL CHARACTERISTICS TA=25 unless otherwise specified | ||||||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =-250A | -100 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.5 | -2.0 | -2.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =-10V, ID =-15A | 48 | 55 | m | |
| Static drain-source on-sate resistance | RDS(on) | VGS =-4.5V, ID =-15A | 52 | 65 | m | |
| Gate resistance | Rg | 3765 | ||||
| Zero gate voltage drain current | IDSS | VDS =-80V, VGS =0V | -1.0 | A | ||
| Zero gate voltage drain current | IDSS | TJ =125 | -100 | A | ||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | GS V =0V, IS= -10A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -30 | A | |||
| Pulsed drain-source diode forward current | ISM | -120 | A | |||
| Dynamic characteristics | ||||||
| Input capacitance | Ciss | VDS =-20V,VGS =0V, f =1MHz | 1250 | pF | ||
| Output capacitance | Coss | f =1MHz | 250 | pF | ||
| Reverse transfer capacitance | Crss | f =1MHz | 136 | pF | ||
2410121721_JSCJ-CJU30P10A_C7435394.pdf
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