Surface Mount Dual N Channel MOSFET JSCJ CJS2013 Featuring Low Gate Charge and High Power Capability
Key Attributes
Model Number:
CJS2013
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13.5mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 N-channel
Input Capacitance(Ciss):
935pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
16nC@4.5V
Mfr. Part #:
CJS2013
Package:
TSSOP-8
Product Description
Product Overview
The CJS2013 is a Dual N-Channel MOSFET featuring TrenchFET technology, offering excellent RDS(on), low gate charge, and high power and current handling capabilities in a surface mount package. It is suitable for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: TSSOP8
- Marking: S2013
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =18V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.7 | V | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =3A | 10.5 | 13.5 | m | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =3A | 13.5 | 16.5 | m | |
| Forward tranconductance | gFS | VDS =5V, ID =4.5A | 10 | S | ||
| Diode forward voltage | VSD | IS=1.25A, VGS = 0V | 1 | 1.2 | V | |
| Input Capacitance | Ciss | VDS =8V,VGS =0V,f =1MHz | 935 | pF | ||
| Output Capacitance | Coss | VDS =8V,VGS =0V,f =1MHz | 170 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =8V,VGS =0V,f =1MHz | 145 | pF | ||
| Turn-on delay time | td(on) | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 16 | ns | ||
| Turn-on rise time | tr | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 8 | ns | ||
| Turn-off delay time | td(off) | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 48 | ns | ||
| Turn-off fall time | tf | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 14 | ns | ||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID=4A | 16 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID=4A | 1.3 | nC | ||
| Gate-Drain Charge | Qg d | VDS =10V,VGS =4.5V,ID=4A | 1.8 | nC |
2411121115_JSCJ-CJS2013_C504157.pdf
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