Silicon Transistor JSMSEMI C945 Featuring Low Noise and High Voltage Operation for Amplifier Circuits
Key Attributes
Model Number:
C945
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
-
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
C945
Package:
SOT-23
Product Description
Product Overview
The C945 is a Silicon Epitaxial Planar Transistor designed for high voltage and high current applications. It features excellent hFE linearity and low noise, making it suitable for audio frequency amplifier circuits. Available in a SOT-23 package.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon Epitaxial Planar Transistor
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Collector-Base Voltage | VCBO | @ Ta=25 | 60 | V | ||
| Collector-Emitter Voltage | VCEO | @ Ta=25 | 50 | V | ||
| Emitter-Base Voltage | VEBO | @ Ta=25 | 5 | V | ||
| Collector Current -Continuous | IC | @ Ta=25 | 100 | mA | ||
| Collector Dissipation | PC | @ Ta=25 | 200 | mW | ||
| Junction and Storage Temperature | Tj,Tstg | @ Ta=25 | -55 | +150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC=0.1mA,IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=0.1mA,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=60V,IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE=50V,IB=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=6V,IC=1mA | 130 | 400 | ||
| DC current gain | hFE | VCE=6V,IC=0.1mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB=10mA | 0.15 | 0.3 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB=10mA | 0.86 | 1 | V | |
| Base to Emitter Voltage | VBE | VCE=6V, IC=1.0mA | 0.55 | 0.62 | 0.65 | V |
| Transition frequency | fT | VCE=6V, IC=10mA, f=30MHz | 150 | MHz | ||
| Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 3.0 | 4.0 | pF | |
| Noise figure | NF | VCE=6V, IC=0.1mA, f=1kMHz, Rg=10k | 4 | 10 | dB |
hFE Classification
| Rank | Range |
| L | 130-200 |
| H | 200-400 |
Package Information
| Package | Dim | Min | Max | Unit |
| SOT-23 | A | 2.70 | 3.10 | mm |
| B | 1.10 | 1.50 | mm | |
| C | 0.90 | 1.10 | mm | |
| D | 0.30 | 0.50 | mm | |
| E | 0.35 | 0.48 | mm | |
| G | 1.80 | 2.00 | mm | |
| H | 0.02 | 0.10 | mm | |
| SOT-23 | J | 0.05 | 0.15 | mm |
| SOT-23 | K | 2.20 | 2.60 | mm |
| SOT-23 | Shipping | 3000pcs / Tape & Reel |
2306301522_JSMSEMI-C945_C916380.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
