Plastic Encapsulate TRIAC JSCJ BTA41 800BW with NPNPN 5 layer Structure and High Junction Temperature
Key Attributes
Model Number:
BTA41-800BW
Product Custom Attributes
Mfr. Part #:
BTA41-800BW
Package:
TO-3P-3
Product Description
Product Overview
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD offers TO-3PK Plastic-Encapsulate TRIACs with NPNPN 5-layer Structure. These devices feature Mesa Glass Passivated Technology, Multi Layers Metal Electrodes, high junction temperature, good commutation performance, and high dV/dt and dI/dt. With an insulating voltage of 2500V(RMS), they are suitable for applications such as heater control, mixers, and motor speed controllers.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: TO-3PK
- Technology: Mesa Glass Passivated
- Structure: NPNPN 5-layer
Technical Specifications
| Part Number | VDRM/VRRM (V) | IT(RMS) (A) | ITSM (A) | I2t (A2s) | dIT/dt (A/s) | IGM (A) | PG(AV) (W) | TSTG () | Tj () | VTM (V) | IGT (mA) | VGT (V) | VGD (V) | IH (mA) | IL (mA) | dVD/dt (V/s) | IDRM/IRRM (A/mA) | Rth(j-c) (/W) | Rth(j-a) (/W) |
| BTA41-600CW | 600 | 40 | 400 | 1000 | 50 | 8 | 1 | -40~+150 | -40~+125 | 1.55 | 35 | 1.3 | 0.2 | 50 | 60 | 500 | 5 | 0.9 | 50 |
| BTA41-800CW | 800 | 40 | 400 | 1000 | 50 | 8 | 1 | -40~+150 | -40~+125 | 1.55 | 35 | 1.3 | 0.2 | 50 | 60 | 500 | 5 | 0.9 | 50 |
| BTA41-600BW | 600 | 40 | 400 | 1000 | 50 | 8 | 1 | -40~+150 | -40~+125 | 1.55 | 50 | 1.3 | 0.2 | 75 | 80 | 500 | 5 | 0.9 | 50 |
| BTA41-800BW | 800 | 40 | 400 | 1000 | 50 | 8 | 1 | -40~+150 | -40~+125 | 1.55 | 50 | 1.3 | 0.2 | 75 | 80 | 500 | 5 | 0.9 | 50 |
2411121117_JSCJ-BTA41-800BW_C527809.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
