TO220 Package Medium Power NPN Silicon Transistor JSMSEMI TIP41C for Linear Switching Applications
Key Attributes
Model Number:
TIP41C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
700uA
Pd - Power Dissipation:
2W
Transition Frequency(fT):
3MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
6A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-
Mfr. Part #:
TIP41C
Package:
TO-220
Product Description
TIP41 Series NPN Power Transistor
The TIP41 series are NPN silicon power transistors in a TO-220 plastic package. They are complementary to the TIP42 series and are designed for medium power linear switching applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Complementary to: TIP42
Technical Specifications
| Parameter | Symbol | TIP41 | TIP41A | TIP41B | TIP41C | Unit | Test Conditions | Min | Typ | Max | |
| Absolute Maximum Ratings (Ta=25) | |||||||||||
| Collector to Base Voltage | VCBO | 40 | 60 | 80 | 100 | V | |||||
| Collector to Emitter Voltage | VCEO | 40 | 60 | 80 | 100 | V | |||||
| Emitter to Base Voltage | VEBO | 5 | V | ||||||||
| Collector Current - Continuous | IC | 6 | A | ||||||||
| Peak Collector Current | ICP | 10 | A | ||||||||
| Base Current - Continuous | IB | 2 | A | ||||||||
| Collector Power Dissipation | PC | 2 | W | ||||||||
| Collector Power Dissipation | PC (Tc=25) | 65 | W | ||||||||
| Junction Temperature | Tj | 150 | |||||||||
| Storage Temperature Range | Tsag | -55150 | |||||||||
| Electrical Characteristics (Ta=25) | |||||||||||
| Collector to Emitter Breakdown Voltage | VCEO | 40 | 60 | 80 | 100 | V | IC=30mA IB=0 | ||||
| Collector Cut-Off Current | ICEO | 40 | 60 | 80 | 100 | mA | VCE=30V IB=0 | 0.7 | |||
| Collector Cut-Off Current | ICES | 400 | A | VCE=40V VEB=0 | |||||||
| Emitter Cut-Off Current | IEBO | 1 | mA | VEB=5V IC=0 | |||||||
| DC Current Gain | hFE(1) | 15 | VCE=4V IC=3A | 75 | |||||||
| DC Current Gain | hFE(2) | 30 | VCE=4V IC=0.3A | ||||||||
| Collector to Emitter Saturation Voltage | VCE(sat) | 1.5 | V | IC=6A IB=0.6A | |||||||
| Base to Emitter Voltage | VBE | 2 | V | IC=6A VCE=4V | |||||||
| Transition Frequency | fT | 3 | MHz | VCE=10V IC=500mA | |||||||
2409292233_JSMSEMI-TIP41C_C963394.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
