Medium power switching transistor JSMSEMI MMBT4401 NPN silicon epitaxial planar for general purpose
Key Attributes
Model Number:
MMBT4401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT4401
Package:
SOT-23
Product Description
MMBT4401 NPN Silicon Epitaxial Planar Transistor
The MMBT4401 is an NPN Silicon Epitaxial Planar Transistor designed for medium power amplification and switching applications. It features epitaxial planar die construction and is ideal for general-purpose and switching applications. A complementary PNP type, MMBT4403, is also available.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon
- Package Type: SOT-23
- Complementary PNP Type: MMBT4403
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current - Continuous | IC | 600 | mA | |||
| Collector Power Dissipation | PC | @ Ta=25 | 350 | mW | ||
| Junction and Storage Temperature | Tj,Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=50V,IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE=35V,IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=1V,IC=0.1mA | 20 | |||
| DC current gain | hFE | VCE=1V,IC=1.0mA | 40 | |||
| DC current gain | hFE | VCE=1V,IC=10mA | 80 | |||
| DC current gain | hFE | VCE=1V,IC=150mA | 100 | |||
| DC current gain | hFE | VCE=2V,IC=500mA | 40 | 300 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=150mA, IB=15mA | 0.4 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA, IB=50mA | 0.75 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=150mA, IB=15mA | 0.75 | 1.2 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=500mA, IB=50mA | 0.95 | V | ||
| Transition frequency | fT | VCE=10V, IC= 20mA, f=100MHz | 250 | MHz | ||
| Collector output capacitance | Cob | VCB=5V,IE=0,f=1MHz | 6.5 | pF |
Package Outline
SOT-23
| Dim | Min | Max |
| A | 2.85 | 2.95 |
| B | 1.25 | 1.35 |
| C | 1.0 | |
| D | 0.37 | 0.43 |
| E | 0.35 | 0.48 |
| G | 1.85 | 1.95 |
| H | 0.02 | 0.1 |
| J | 0.1 | |
| K | 2.35 | 2.45 |
| All Dimensions in mm | ||
Package Information
| Device | Package | Shipping |
| MMBT4401 | SOT-23 | 3000/Tape&Reel |
2306301522_JSMSEMI-MMBT4401_C916376.pdf
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