JSMSEMI TIP127 JSM Silicon PNP Darlington Power Transistor with High Collector Current and Amplifier
Key Attributes
Model Number:
TIP127-JSM
Product Custom Attributes
Current - Collector Cutoff:
-
Pd - Power Dissipation:
2W
DC Current Gain:
1000
Transition Frequency(fT):
-
Type:
PNP
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-
Mfr. Part #:
TIP127-JSM
Package:
TO-220-3
Product Description
Product Overview
The TIP125/126/127 are Silicon PNP Darlington Power Transistors designed for general-purpose amplifier and low-speed switching applications. They feature a TO-220C package, high DC current gain, and low collector saturation voltage, making them a complementary type to the TIP120/121/122 series.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon
Technical Specifications
| Parameter | Conditions | TIP125 | TIP126 | TIP127 | Unit |
| VCBO (Collector-base voltage) | Open emitter | -60 | -80 | -100 | V |
| VCEO (Collector-emitter voltage) | Open base | -60 | -80 | -100 | V |
| VEBO (Emitter-base voltage) | Open collector | -5 | V | ||
| IC (Collector current-DC) | -5 | A | |||
| ICM (Collector current-Pulse) | -8 | A | |||
| IB (Base current-DC) | -120 | mA | |||
| PC (Collector power dissipation) | TC=25 | 65 | W | ||
| Ta=25 | 2 | W | |||
| Tj (Junction temperature) | 150 | ||||
| Tstg (Storage temperature) | -65~150 | ||||
| VCEO(SUS) (Collector-emitter sustaining voltage) | IC=-0.1A, IB=0 | -60 | -80 | -100 | V |
| VCEsat-1 (Collector-emitter saturation voltage) | IC=-3A ,IB=-12mA | -2.0 | V | ||
| VCEsat-2 (Collector-emitter saturation voltage) | IC=-5A ,IB=-20mA | -4.0 | V | ||
| VBE (Base-emitter on voltage) | IC=-3.0A ; VCE=-3V | -2.5 | V | ||
| ICBO (Collector cut-off current) | TIP125 VCB=-60V, IE=0 | -0.2 | mA | ||
| TIP126 VCB=-80V, IE=0 | -0.2 | mA | |||
| TIP127 VCB=-100V, IE=0 | -0.2 | mA | |||
| ICEO (Collector cut-off current) | TIP125 VCE=-30V, IB=0 | -0.5 | mA | ||
| TIP126 VCE=-40V, IB=0 | -0.5 | mA | |||
| TIP127 VCE=-50V, IB=0 | -0.5 | mA | |||
| IEBO (Emitter cut-off current) | VEB=-5V; IC=0 | -2 | mA | ||
| hFE-1 (DC current gain) | IC=-0.5A ; VCE=-3V | 1000 | |||
| hFE-2 (DC current gain) | IC=-3.0A ; VCE=-3V | 1000 | |||
| Cob (Output capacitance) | IE=0 ; VCB=-10V,f=0.1MHz | 300 | pF | ||
2401051657_JSMSEMI-TIP127-JSM_C7498975.pdf
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