SMT Zener Diode JSMSEMI MM3Z9V1BW with Tight Voltage Tolerance and Ultra Low Profile Package Design
Key Attributes
Model Number:
MM3Z9V1BW
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
30Ω
Diode Configuration:
Independent
Zener Voltage(Range):
8.92V~9.28V
Pd - Power Dissipation:
400mW
Zener Voltage(Nom):
9.1V
Mfr. Part #:
MM3Z9V1BW
Package:
SOD-323
Product Description
Product Overview
The MM3Z2V0BW - MM3Z75BW series are SMT-type Zener diodes offering a wide range of zener voltages from 2V to 75V. They feature tight voltage tolerance of 2% for the B-series and an ultra low-profile package suitable for automated assembly. These diodes are ideal for general voltage regulation applications, particularly in mobile and handheld systems.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package Type: SOD-323
- MSL Class: Class 1 compatible
Technical Specifications
| Part Number | Marking | Zener Voltage Range (V) | ZT (at IZT = 5mA) () Max | R at VR (A) Max | ZT (at IZT = 5mA) (V) Max |
| MM3Z2V0BW | B0 | 1.96 - 2.04 | 100 | 120 | 0.5 |
| MM3Z2V2BW | C0 | 2.16 - 2.24 | 100 | 120 | 0.7 |
| MM3Z2V4BW | 1C | 2.35 - 2.45 | 100 | 120 | 1 |
| MM3Z2V7BW | 1D | 2.65 - 2.75 | 110 | 120 | 1 |
| MM3Z3V0BW | 1E | 2.94 - 3.06 | 120 | 50 | 1 |
| MM3Z3V3BW | 1F | 3.23 - 3.37 | 130 | 20 | 1 |
| MM3Z3V6BW | 1H | 3.53 - 3.67 | 130 | 10 | 1 |
| MM3Z3V9BW | 1J | 3.82 - 3.98 | 130 | 5 | 1 |
| MM3Z4V3BW | 1K | 4.21 - 4.39 | 130 | 5 | 1 |
| MM3Z4V7BW | 1M | 4.61 - 4.79 | 130 | 2 | 1 |
| MM3Z5V1BW | 1N | 5.0 - 5.2 | 130 | 2 | 1.5 |
| MM3Z5V6BW | 1P | 5.49 - 5.71 | 80 | 1 | 2.5 |
| MM3Z6V2BW | 1R | 6.08 - 6.32 | 50 | 1 | 3 |
| MM3Z6V8BW | 1X | 6.66 - 6.94 | 30 | 0.5 | 3.5 |
| MM3Z7V5BW | 1Y | 7.35 - 7.65 | 30 | 0.5 | 4 |
| MM3Z8V2BW | 1Z | 8.04 - 8.36 | 30 | 0.5 | 5 |
| MM3Z9V1BW | 2A | 8.92 - 9.28 | 30 | 0.5 | 6 |
| MM3Z10BW | 2B | 9.8 - 10.2 | 30 | 0.1 | 7 |
| MM3Z11BW | 2C | 10.78 - 11.22 | 30 | 0.1 | 8 |
| MM3Z12BW | 2D | 11.76 - 12.24 | 35 | 0.1 | 9 |
| MM3Z13BW | 2E | 12.74 - 13.26 | 35 | 0.1 | 10 |
| MM3Z15BW | 2F | 14.7 - 15.3 | 40 | 0.1 | 11 |
| MM3Z16BW | 2H | 15.68 - 16.32 | 40 | 0.1 | 12 |
| MM3Z18BW | 2J | 17.64 - 18.36 | 45 | 0.1 | 13 |
| MM3Z20BW | 2K | 19.6 - 20.4 | 50 | 0.1 | 15 |
| MM3Z22BW | 2M | 21.56 - 22.44 | 55 | 0.1 | 17 |
| MM3Z24BW | 2N | 23.52 - 24.48 | 60 | 0.1 | 19 |
| MM3Z27BW | 2P | 26.46 - 27.54 | 70 | 0.1 | 21 |
| MM3Z30BW | 2R | 29.4 - 30.60 | 80 | 0.1 | 23 |
| MM3Z33BW | 2X | 32.34 - 33.66 | 80 | 0.1 | 25 |
| MM3Z36BW | 2Y | 35.28 - 36.72 | 90 | 0.1 | 27 |
| MM3Z39BW | 2Z | 38.22 - 39.78 | 100 | 0.1 | 30 |
| MM3Z43BW | 3A | 42.14 - 43.86 | 130 | 0.1 | 33 |
| MM3Z47BW | 3B | 46.06 - 47.94 | 150 | 0.1 | 36 |
| MM3Z51BW | 3C | 49.98 - 52.02 | 180 | 0.1 | 39 |
| MM3Z56BW | 3D | 54.88 - 57.12 | 200 | 0.1 | 43 |
| MM3Z62BW | 3E | 60.76 - 63.24 | 215 | 0.1 | 47 |
| MM3Z68BW | 3F | 66.64 - 69.36 | 240 | 0.1 | 52 |
| MM3Z75BW | 3H | 73.5 - 76.5 | 265 | 0.1 | 56 |
| Parameter | Symbol | Value | Unit |
| Forward Voltage | VF | 0.9 | V |
| Power Dissipation | PD | 400 | mW |
| Thermal Resistance (Junction-to-Ambient) | RJA | 313 | C/W |
| Junction Temperature Range | TJ | -55 ~ +150 | C |
| Storage Temperature Range | TSTG | -65 ~ +150 | C |
2401051645_JSMSEMI-MM3Z9V1BW_C917098.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
