NPN transistor JTD JTDS8050 ideal for general purpose electronic circuit switching and amplification
Key Attributes
Model Number:
JTDS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
400MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
JTDS8050
Package:
SOT-23
Product Description
S8050 Transistor (NPN)
The S8050 is an NPN bipolar junction transistor designed for general-purpose applications. It is complementary to the S8550 transistor, offering similar performance characteristics. This transistor is suitable for various electronic circuits requiring amplification or switching functions.
Product Attributes
- Brand: JTD
- Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
- Complementary to: S8550
- Marking: J3Y
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40 V , IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCB=20V , I E=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V , IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V, IC= 50mA | 120 | 400 | ||
| DC current gain | hFE(2) | VCE=1V, IC= 500mA | 50 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=500 mA, IB= 50mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500 mA, IB= 50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=6V, IC= 20mA, f=30MHz | 150 | MHz |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-Base Voltage | VCBO | 40 | V |
| Collector-Emitter Voltage | VCEO | 25 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 500 | mA |
| Collector Power Dissipation | PC | 300 | mW |
| Thermal Resistance From Junction To Ambient | RJA | 417 | /W |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55+150 |
SOT-23 Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
| A | 0.900 - 1.150 | 0.035 - 0.045 |
| A1 | 0.000 - 0.100 | 0.000 - 0.004 |
| A2 | 0.900 - 1.050 | 0.035 - 0.041 |
| b | 0.300 - 0.500 | 0.012 - 0.020 |
| c | 0.080 - 0.150 | 0.003 - 0.006 |
| D | 2.800 - 3.000 | 0.110 - 0.118 |
| E | 1.200 - 1.400 | 0.047 - 0.055 |
| E1 | 2.250 - 2.550 | 0.089 - 0.100 |
| e | 1.800 - 2.000 | 0.071 - 0.079 |
| e1 | ||
| L | 0.550 REF | 0.022 REF |
| L1 | 0.300 - 0.500 | 0.012 - 0.020 |
| 0 - 8 | 0 - 8 |
2504101957_JTD-JTDS8050_C42443448.pdf
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